Semiconductor device and driving method thereof

ABSTRACT

The storage device includes a volatile first memory circuit and a nonvolatile second memory circuit which includes a transistor whose channel is formed in an oxide semiconductor layer. In the case of high-frequency driving, during a period when source voltage is applied, a data signal is input to and output from the first memory circuit, and during a part of a period when source voltage is supplied, which is before the supply of the source voltage is stopped, a data signal is input to the second memory circuit. In the case of low-frequency driving, during a period when source voltage is applied, a data signal is input to the second memory circuit, the data signal input to the second memory circuit is input to the first memory circuit, and the data signal input to the first memory circuit is output.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.13/429,668, filed Mar. 26, 2012, now allowed, which claims the benefitof foreign priority applications filed in Japan as Serial No.2011-0756646 on Mar. 30, 2011 and Serial No. 2011-108888 on May 14,2011, all of which are incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The disclosed invention relates to a storage device.

2. Description of the Related Art

Signal processing units such as central processing units (CPUs) vary instructure depending on the intended use. A signal processing unitgenerally has a main memory for storing data or program and other memorycircuits such as a register and a cache memory. A register has afunction of temporarily holding a data signal when arithmetic processingis carried out, when a program execution state is held, or the like.Meanwhile, a cache memory, which is located between an arithmetic unitand a main memory, is provided to reduce low-speed access to the mainmemory and speed up arithmetic processing.

In a memory circuit in a signal processing unit, such as a register or acache memory, input of a data signal needs to be performed at higherspeed than in a main memory. Thus, in general, a flip-flop or the likeis used as a register, and a static random access memory (SRAM) or thelike is used as a cache memory. In other words, such a register, a cachememory, or the like is a volatile memory circuit which loses a datasignal after the supply of power supply potential is stopped.

In order to reduce power consumption, a method has been suggested inwhich the application of source voltage to a signal processing unit istemporarily stopped while input/output of data signals is not conducted(see Patent Document 1, for example). In the method in Patent Document1, a nonvolatile memory circuit is located on the periphery of avolatile memory circuit such as a register or a cache memory, and thedata signal is temporarily stored in the nonvolatile memory circuit.Thus, in the signal processing unit, the data signal stored in theregister, the cache memory, or the like can be held even while thesupply of source voltage is stopped.

In the case where the application of source voltage to a signalprocessing unit is stopped for a long time, a data signal in a volatilememory circuit is transferred to an external memory circuit such as ahard disk or a flash memory before the application of source voltage isstopped, so that the data signal can be prevented from being lost.

REFERENCE

-   [Patent Document 1] Japanese Published Patent Application No.    H10-078836

SUMMARY OF THE INVENTION

The method in which a data signal that has been held in a volatilememory circuit is stored in a nonvolatile memory circuit located on theperiphery of the volatile memory circuit, while the application ofsource voltage to the signal processing unit is stopped, involves acomplicated process of manufacturing the signal processing unit. This isbecause a magnetic element or a ferroelectric is mainly used for thenonvolatile memory circuit.

In the case of employing the method in which a data signal that has beenheld in a volatile memory circuit is stored in an external memorycircuit while the application of source voltage to a signal processingunit is stopped, it takes a long time to send back the data signal fromthe external memory circuit to the volatile memory circuit. Therefore,backing up a data signal to an external memory circuit is not suitablefor the case where the application of source voltage to a signalprocessing unit is stopped for a short time for reduction in powerconsumption.

In view of the above problems, an object of one embodiment of thedisclosed invention is to provide a storage device which does not need acomplicated manufacturing process and has lower power consumption. Inparticular, an object is to provide a storage device in which powerconsumption is reduced by stopping the application of source voltageeven for a short time.

According to one embodiment of the disclosed invention, a memory circuitincluding a first transistor and a storage capacitor is used as anonvolatile memory circuit. As the first transistor, for example, atransistor whose channel is formed in an oxide semiconductor layer(hereinafter referred to as an oxide semiconductor transistor) is used.Having an extremely low off-state current, the oxide semiconductortransistor can be included in a nonvolatile memory circuit. Such anonvolatile memory circuit including an oxide semiconductor transistoras the first transistor has an advantage that properties thereof are notdeteriorated due to rewriting.

Note that the operation frequency of an oxide semiconductor transistoris lower than that of a transistor whose channel is formed in a siliconlayer (hereinafter referred to as a silicon transistor). Thus, when amemory circuit including an oxide semiconductor transistor is driven ata high frequency, a malfunction might occur.

A memory circuit including a silicon transistor is a volatile memorycircuit which can store a data signal only while source voltage issupplied. Such a volatile memory circuit including a silicon transistorcan also be driven at a high frequency.

According to one embodiment of the disclosed invention, when a storagedevice is driven at a high frequency, a data signal is read and writtenfrom/to a memory circuit including a silicon transistor. Only in aperiod before the application of source voltage is stopped, a datasignal is written to a nonvolatile memory circuit including an oxidesemiconductor transistor. After the application of source voltage isresumed, the data signal held in the nonvolatile storage circuitincluding the oxide semiconductor transistor is read and the data signalis written to the memory circuit including the silicon transistor.

According to one embodiment of the disclosed invention, when a storagedevice is driven at a low frequency, a data signal is read and writtenfrom/to a nonvolatile memory circuit including an oxide semiconductortransistor, and the data signal written to the nonvolatile memorycircuit is written to a memory circuit including a silicon transistor.

Note that, in one embodiment of the disclosed invention, a highfrequency means a frequency at which a data signal cannot be read andwritten from/to a nonvolatile memory circuit, whereas a low frequencymeans a frequency at which a data signal can be read and written from/tothe nonvolatile memory circuit through an oxide semiconductortransistor. Whether writing and reading of a data signal can beperformed depends on the operation frequency of the oxide semiconductortransistor included in the nonvolatile memory circuit.

Switching of these two operation methods with an external or internalcontrol signal makes it possible to obtain a storage device which can bedriven at a wide range of frequencies and has lower power consumption.

One embodiment of the disclosed invention is a storage device includinga volatile first memory circuit which holds a data signal only in aperiod when source voltage is supplied; a nonvolatile second memorycircuit which includes a transistor whose channel is formed in an oxidesemiconductor layer and a storage capacitor electrically connected toone of a source and a drain of the transistor; a selection circuit whichperforms switching from input of a signal to a first input terminal or asecond input terminal to output of the signal input to the first inputterminal or the second input terminal to the first memory circuit, inresponse to a selection signal which is input to the selection circuit;a first switch which is turned on or off in response to a signal whosephase is an inverse of that of a clock signal and which is connected tothe selection circuit and the other of the source and the drain of thetransistor; and a second switch which is turned on or off in response tothe clock signal and which is connected to the first memory circuit andthe selection circuit. The selection circuit includes the first inputterminal connected to the first switch and the other of the source andthe drain of the transistor, the second input terminal connected to thestorage capacitor and the one of the source and the drain of thetransistor, and an output terminal connected to the first memorycircuit.

According to one embodiment of the disclosed invention, the first memorycircuit is a latch circuit.

According to one embodiment of the disclosed invention, the latchcircuit includes a first inverter and a second inverter. An inputterminal of the first inverter is electrically connected to an outputterminal of the second inverter. An output terminal of the firstinverter is electrically connected to an input terminal of the secondinverter.

According to one embodiment of the disclosed invention, the first memorycircuit includes a transistor whose channel is formed in a siliconlayer.

According to one embodiment of the disclosed invention, the storagedevice includes the first switch, the second switch, the selectioncircuit, and a phase inversion element.

According to one embodiment of the disclosed invention, the first switchand the second switch are analog switches.

According to one embodiment of the disclosed invention, the phaseinversion element is an inverter.

According to one embodiment of the disclosed invention, it is possibleto provide a storage device which does not need a complicatedmanufacturing process and has lower power consumption. In particular, itis possible to provide a storage device in which power consumption isreduced by stopping the application of source voltage even for a shorttime.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 is a circuit diagram of a storage device;

FIG. 2 is a timing diagram showing the operation of a storage device;

FIG. 3 is a timing diagram showing the operation of a storage device;

FIG. 4 is a circuit diagram of a storage device;

FIGS. 5A to 5C are cross-sectional views of a silicon transistor andoxide semiconductor transistors;

FIG. 6 is a block diagram of a portable electronic device;

FIG. 7 is a block diagram of a memory circuit;

FIG. 8 is a block diagram of an e-book reader;

FIGS. 9A to 9D are cross-sectional views of oxide semiconductortransistors;

FIG. 10 is a cross-sectional view illustrating a structure of a storagedevice;

FIG. 11 is a cross-sectional view illustrating a structure of a storagedevice;

FIGS. 12A and 12B are diagrams illustrating structures of storagedevices;

FIG. 13 is a block diagram of a signal processing circuit;

FIG. 14 is a block diagram of a CPU including a storage device;

FIGS. 15A to 15E illustrate structures of oxide materials;

FIGS. 16A to 16C are diagrams illustrating a structure of an oxidematerial;

FIGS. 17A to 17C illustrate a structure of an oxide material;

FIG. 18 is a graph showing gate voltage dependence of mobility, which isobtained by calculation;

FIGS. 19A to 19C are graphs each showing gate voltage dependence ofdrain current and mobility, which is obtained by calculation;

FIGS. 20A to 20C are graphs each showing gate voltage dependence ofdrain current and mobility, which is obtained by calculation;

FIGS. 21A to 21C are graphs each showing gate voltage dependence ofdrain current and mobility, which is obtained by calculation;

FIGS. 22A and 22B are diagrams illustrating cross-sectional structuresof transistors used for calculation;

FIGS. 23A to 23C are graphs each showing gate voltage dependence ofdrain current and mobility of a transistor;

FIGS. 24A and 24B are graphs each showing V_(g)-I_(d) characteristicsafter BT tests of a transistor of Sample 1;

FIGS. 25A and 25B are graphs each showing V_(g)-I_(d) characteristicsafter a BT test of a transistor of Sample 2;

FIG. 26 is a graph showing XRD spectra of Sample A and Sample B;

FIG. 27 is a graph showing the relation between the off-state current ofa transistor and the substrate temperature in measurement;

FIG. 28 is a graph showing V_(g) dependence of I_(d) and field-effectmobility;

FIG. 29A is a graph showing the relation between substrate temperatureand threshold voltage, and FIG. 29B is a graph showing the relationbetween substrate temperature and field-effect mobility;

FIGS. 30A and 30B are diagrams illustrating a structure of a transistoraccording to one embodiment of the present invention;

FIGS. 31A and 31B are diagrams illustrating a structure of a transistoraccording to one embodiment of the present invention; and

FIGS. 32A and 32B illustrate structures of oxide materials.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the invention disclosed in this specification will bedescribed below with reference to the accompanying drawings. Note thatthe invention disclosed in this specification can be implemented in avariety of different modes, and it is easily understood by those skilledin the art that the modes and details of the invention disclosed in thisspecification can be modified in various ways without departing from thespirit and scope thereof. Therefore, the disclosed invention is notconstrued as being limited to description of the embodiments. Note that,in the drawings hereinafter shown, the same portions or portions havingsimilar functions are denoted by common reference numerals, and repeateddescription thereof will be omitted.

Note that the position, the size, the range, or the like of eachstructure shown in the drawings and the like is not accuratelyrepresented in some cases for the sake of simplicity. Therefore, thedisclosed invention is not necessarily limited to the position, thesize, the range, or the like disclosed in the drawings and the like.

In this specification and the like, ordinal numbers such as “first”,“second”, and “third” are used in order to avoid confusion amongcomponents, and the terms do not mean limitation of the number ofcomponents. Note that a voltage often refers to a potential differencebetween a given potential and a reference potential (e.g., a groundpotential). Accordingly, voltage, potential and a potential differencecan be referred to as potential, voltage, and a voltage difference,respectively.

Note that when it is explicitly described that “A and B are connected,”the case where A and B are electrically connected, the case where A andB are functionally connected, and the case where A and B are directlyconnected are included therein.

In this specification, an “on” state of a transistor means that a sourceand a drain thereof are electrically connected, whereas an “off” stateof a transistor means that a source and a drain thereof are notelectrically connected.

Embodiment 1 <Configuration of Storage Device in FIG. 1>

FIG. 1 is a circuit diagram of a storage device according to thisembodiment.

A storage device 130 in FIG. 1 includes a memory circuit 120 including afirst transistor 101 and a storage capacitor 102 and a memory circuit121 including a second transistor. The storage device 130 in FIG. 1further includes a phase inversion element 135, a switch 134, aselection circuit 136, and a switch 139.

As the first transistor 101, for example, a transistor whose channel isformed in an oxide semiconductor layer (oxide semiconductor transistor)is used. Having an extremely low off-state current, the oxidesemiconductor transistor can be included in a nonvolatile memorycircuit. The nonvolatile memory circuit 120 including such an oxidesemiconductor transistor as the first transistor has an advantage thatthe properties thereof are not deteriorated due to rewriting. The oxidesemiconductor layer will be described later.

As the second transistor, for example, a transistor whose channel isformed in a silicon layer is used. The silicon layer may be a singlecrystal silicon layer or a polycrystalline silicon layer; in particular,a transistor whose channel is formed in a single crystal silicon layeris preferable because it is driven at a high frequency.

The phase inversion element 135 is a logic element which inverts thephase of a signal input and outputs the signal. As the phase inversionelement 135, for example, an inverter or the like can be used.

The switches 134 and 139 are turned on or off in response to a clocksignal CLK. For the switches 134 and 139, for example, transistors suchas an n-channel transistor and a p-channel transistor, and an analogswitch can be used. In this embodiment, as the switches 134 and 139,switches which are turned on when a high-level potential (VDD) issupplied and which are turned off when a low-level potential (VSS) issupplied are used.

The clock signal CLK is input to the phase inversion element 135. Fromthe phase inversion element 135, a signal CLKb whose phase is theinverse of that of the clock signal CLK is output, and the output signalCLKb is input to the switch 134.

The phase inversion element 135 is driven when a source voltage Vx whichis a high power supply potential and a low power supply potential (e.g.,a ground potential GND) are applied to the phase inversion element 135.

A data signal D is input to the switch 134. The switch 134 iselectrically connected to the selection circuit 136 and one of a sourceand a drain of the first transistor 101. As described above, the switch134 is turned on or off in response to the clock signal CLK.

A control signal OS_WE is input to a gate of the first transistor 101.One of the source and the drain of the first transistor 101 iselectrically connected to the switch 134 and the selection circuit 136.The other of the source and the drain of the first transistor 101 iselectrically connected to the storage capacitor 102 and the selectioncircuit 136. Note that the connection portion between the storagecapacitor 102 and the other of the source and the drain of the firsttransistor 101 is a node M1.

One terminal of the storage capacitor 102 is electrically connected tothe selection circuit 136 and the other of the source and the drain ofthe first transistor 101. The other terminal of the storage capacitor102 is given a low power supply potential (e.g., the ground potentialGND).

The selection circuit 136 is electrically connected to the switch 134and one of the source and the drain of the first transistor 101. Theselection circuit 136 is also electrically connected to the storagecapacitor 102 and the other of the source and the drain of the firsttransistor 101. The selection circuit 136 is also electrically connectedto the memory circuit 121.

The selection circuit 136 selects one of two input signals on the basisof a selection signal SEL and outputs the selected signal.

The selection circuit 136 is driven when the source voltage Vx which isa high power supply potential and a low power supply potential (e.g.,the ground potential GND) are applied to the selection circuit 136.

The memory circuit 121 is electrically connected to the selectioncircuit 136 and the switch 139.

The memory circuit 121 includes the second transistor. Specifically, alatch circuit including the second transistor is used as the memorycircuit 121.

The memory circuit 121 is driven when the source voltage Vx which is ahigh power supply potential and a low power supply potential (e.g., theground potential GND) are applied to the memory circuit 121.

The switch 139 is electrically connected to the memory circuit 121.Further, the switch 139 outputs an output signal Q. As described above,the switch 139 is turned on or off in response to the clock signal CLK.

If necessary, a buffer circuit may be provided between the selectioncircuit 136 and the other of the source and the drain of the firsttransistor 101/the storage capacitor 102. The provision of the buffercircuits makes it possible to widen the range of the storage device 130,in which operation can be performed.

<Driving Method of Storage Device>

FIG. 2 is a timing diagram in the case where the storage device 130 inFIG. 1 is driven at a high frequency, and FIG. 3 is a timing diagram inthe case where the storage device 130 in FIG. 1 is driven at a lowfrequency.

Note that a high frequency in this embodiment is a frequency at whichthe data signal D cannot be read and written from/to the storagecapacitor 102 through the first transistor 101. The high frequency is,for example, 1 MHz or higher. Meanwhile, a low frequency in thisembodiment is a frequency at which the data signal D can be read andwritten from/to the storage capacitor 102 through the first transistor101. The low frequency is, for example, lower than 1 MHz.

<High Frequency Operation (FIG. 2)>

First, the operation of the storage device 130 at a high frequency willbe described with reference to FIG. 2.

<Normal Operation Period (Period T1)>

A period in which the storage device 130 operates normally is a periodT1. In the period T1, the clock signal CLK is input to the switch 139.In addition, the signal CLKb whose phase is the inverse of that of theclock signal CLK is input to the switch 134 through the phase inversionelement 135.

When the clock signal CLK is changed from the high-level potential (VDD)to the low-level potential (VSS), the switch 134 is turned on and theswitch 139 is turned off. When the switch 134 is turned on, the datasignal D is input to the storage device 130 in FIG. 1.

In the period T1, the data signal D (Data A) is input to the memorycircuit 121 through the switch 134 and the selection circuit 136, and isstored in the memory circuit 121.

After that, when the clock signal CLK is changed from the low-levelpotential (VSS) to the high-level potential (VDD), the switch 134 isturned off and the switch 139 is turned on. Consequently, the datasignal D (Data A) stored in the memory circuit 121 is output as anoutput signal Q (Data A).

In the period T1, the potential of the node M1 may be either thehigh-level potential (VDD) or the low-level potential (VSS) (thepotential of the node M1 is denoted as “XM1” in FIG. 2).

<Writing Operation Period (Period T2)>

A period in which the data signal D is written to the memory circuit 120including the first transistor 101 and the storage capacitor 102 is aperiod T2. The period T2 is a period prior to a period T3 (a period inwhich the application of source voltage is stopped) to be describedlater. That is to say, the data signal D is written to the memorycircuit 120 before the application of the source voltage Vx is stopped.

At the beginning of the period T2, the control signal OS_WE forcontrolling the first transistor 101 has a voltage at which the datasignal D can be written sufficiently and the voltage is applied to thegate of the first transistor 101, so that the source and the drain ofthe first transistor 101 are electrically connected to each other(brought into an on state). Thus, the data signal D (Data A) is input tothe storage capacitor 102 through the first transistor 101, and is heldby the storage capacitor. The voltage at which the data signal can besufficiently written to the storage capacitor 102 may be either apotential other than the high-level potential (VDD) or the high-levelpotential (VDD).

<Source Voltage Supply Stop Period (Period T3)>

A period in which the application of the source voltage Vx is stopped isa period T3. At the beginning of the period T3, the application of thesource voltage Vx to the storage device 130 is stopped. Further, thecontrol signal OS_WE for controlling the first transistor 101 is changedto the low-level potential (VSS). Consequently, the first transistor 101is turned off. When the application of the source voltage Vx is stopped,the data (Data A) stored in the memory circuit 121 is erased. However,the data signal D (Data A) stored in the storage capacitor 102 is heldeven after the application of the source voltage Vx to the memorycircuit 121 is stopped. The data signal D (Data A) stored in the storagecapacitor 102 can be held for a long time because the leakage current ofthe first transistor 101 connected to the storage capacitor 102 issignificantly small. Thus, the storage device 130 holds the data signalD (Data A) even after the cessation of the application of the sourcevoltage Vx. In the period T3, the source voltage Vx is not applied tothe storage device 130.

Further, since the application of the source voltage Vx to the storagedevice 130 is stopped, the input of the clock signal CLK is alsostopped.

The data signal D (Data A) stored in the storage capacitor 102 can beheld for a long time because the leakage current of the first transistor101 is significantly low as described above. However, a buffer circuitmay be provided between the selection circuit 136 and the other of thesource and the drain of the first transistor 101/the storage capacitor102 as needed. The buffer circuit can compensate the drop of the voltageof the data signal D held in the storage capacitor 102 when the voltagedrops in the source voltage supply stop period. When the buffer circuitis provided so that the drop of the voltage can be compensated, it ispossible to expand the range of the storage device 130, in which theoperation can be performed.

In the period T3, the data signal D may be either the high-levelpotential (VDD) or the low-level potential (VSS) (the data signal D isdenoted as “XD” in FIG. 2). In addition, the output signal Q is not alsodetermined (the output signal Q is denoted as “XQ” in FIG. 2).

<Source Voltage Supply Resumption Period (Period T4)>

A period in which the application of the source voltage Vx is resumed isa period T4. At the beginning of the period T4, the application of thesource voltage Vx to the storage device 130 is resumed. At this time,the control signal OS_WE for controlling the first transistor 101 is thelow-level potential (VSS), so that the first transistor 101 remains off.Thus, the data signal D (Data A) remains stored in the storage capacitor102.

The application of the source voltage Vx to the storage device 130 isresumed and the clock signal CLK is set to a high-level potential (VDD).Accordingly, the switch 134 is turned off and the switch 139 is turnedon.

<Reading Operation Period (Period T5)>

A period in which the data signal D written to the memory circuit 120 isread is a period T5. At the beginning of the period T5, the selectionsignal SEL is changed from the low-level potential (VSS) to thehigh-level potential (VDD). The selection signal SEL set to thehigh-level potential (VDD) is input to the selection circuit 136, andthe data signal D (Data A) stored in the storage capacitor 102 is inputto the memory circuit 121. The switch 139 is turned on at the end of theperiod T4, so that the data signal D (Data A) input to the memorycircuit 121 is output as the output signal Q (Data A).

After the end of the period T5 which is the reading operation period,another period T1 (normal operation period) starts, and another datasignal D (Data A+1) is input to the storage device 130.

As described above, in the driving of the storage device at a highfrequency, the high-level potential (VDD) is supplied to the gate of thefirst transistor 101 in the period T2 (writing operation period), sothat the data signal D is stored in the storage capacitor 102 throughthe first transistor 101.

In the period T3 in which the application of the source voltage Vx isstopped and the period T4 in which the application of the source voltageVx is resumed, the data signal D stored in the storage capacitor 102through the first transistor 101 is output as the output signal Q.

In the period T1 (normal operation period), the period T2 (writingoperation period), and the period T5 (reading operation period), thedata signal D stored in the memory circuit 121 is output as the outputsignal Q.

<Low Frequency Operation (FIG. 3)>

Next, the operation of the storage device at a low frequency will bedescribed with reference to FIG. 3.

<Normal Operation Period (Period T1)>

In a manner similar to that of the operation at a high frequency, in theperiod T1, the clock signal CLK is input to the switch 139. In addition,the signal CLKb whose phase is the inverse of that of the clock signalCLK is input to the switch 134 through the phase inversion element 135.

When the clock signal CLK is changed from the high-level potential (VDD)to the low-level potential (VSS), the switch 134 is turned on and theswitch 139 is turned off. When the switch 134 is turned on, the datasignal D is input to the memory circuit 120.

At the beginning of the period T1, the control signal OS_WE forcontrolling the first transistor 101 is input to the gate of the firsttransistor 101. At this time, the control signal OS_WE is the high-levelpotential (VDD). Accordingly, the first transistor 101 is turned on.Since the first transistor 101 is on, the data signal D (Data A) isstored in the storage capacitor 102 through the switch 134 and the firsttransistor 101. At this time, a first input terminal and a second inputterminal of the selection circuit 136 are in a non-conduction state andin a conduction state, respectively. Thus, the data signal D (Data A) isnot input to the memory circuit 121.

In the case where the storage device 130 is driven at a low frequency,the data signal D (Data A) can be written to the memory circuit 120including the storage capacitor 102 through the first transistor 101 inthe period T1. Thus, even when the drive frequency of the firsttransistor 101 is low, it is possible to secure sufficient time forwriting the data signal D (Data A) to the memory circuit 120.Accordingly, since a writing operation period (Period T2) to bedescribed later can be substantially omitted, power consumption can bereduced.

After that, when the clock signal CLK is changed from the low-levelpotential (VSS) to the high-level potential (VDD), the switch 134 isturned off and the switch 139 is turned on. Consequently, the datasignal D (Data A) stored in the storage capacitor 102 is written to thememory circuit 121 through the selection circuit 136. The data signal D(Data A) written to the memory circuit 121 is output as the outputsignal Q (Data A).

<Writing Operation Period (Period T2)>

In the case where the storage device 100 is driven at a low frequency,the state at the end of the period T1 is maintained in the period T2.

<Source Voltage Supply Stop Period (Period T3)>

Next, the operation in the period T3 will be described. At the beginningof the period T3, the application of the source voltage Vx to thestorage device 130 is stopped. Further, the control signal OS_WE forcontrolling the first transistor 101 is set to the low-level potential(VSS). Consequently, the first transistor 101 is turned off. When theapplication of the source voltage Vx is stopped, the data (Data A)stored in the memory circuit 121 is erased. However, the data signal D(Data A) stored in the storage capacitor 102 is held even after theapplication of the source voltage Vx to the memory circuit 121 isstopped. The data signal D (Data A) stored in the storage capacitor 102can be held for a long time because the leakage current of the firsttransistor 101 connected to the storage capacitor 102 is significantlysmall. Thus, the storage device 130 holds the data signal D (Data A)even after the cessation of the application of the source voltage Vx.During the period T3, the source voltage Vx is not applied to thestorage device 130.

Further, since the application of the source voltage Vx to the storagedevice 130 is stopped, the input of the clock signal CLK is alsostopped.

In the period T3, the data signal D may be either the high-levelpotential (VDD) or the low-level potential (VSS) (the data signal D isdenoted as “XD” in FIG. 2). In addition, the output signal Q is notdetermined (the output signal Q is denoted as “XQ” in FIG. 2).

<Source Voltage Supply Resumption Period (Period T4)>

Next, the operation in the period T4 will be described. At the beginningof the period T4, the application of the source voltage Vx to thestorage device 130 is resumed. At this time, the control signal OS_WEfor controlling the first transistor 101 is the low-level potential(VSS), so that the first transistor 101 remains off. Thus, the datasignal D (Data A) remains stored in the storage capacitor 102.

The application of the source voltage Vx to the storage device 130 isresumed and the clock signal CLK is set to a high-level potential (VDD).Accordingly, the switch 134 is turned off and the switch 139 is turnedon.

<Reading Operation Period (Period T5)>

Next, the operation in the period T5 will be described. At the end ofthe period T4, the selection signal SEL is changed to the high-levelpotential (VDD). The selection signal SEL set to the high-levelpotential (VDD) is input to the selection circuit 136, and the datasignal D (Data A) stored in the storage capacitor 102 is input to thememory circuit 121. The switch 139 is turned on at the end of the periodT4, so that the data signal D (Data A) input to the memory circuit 121is output as the output signal Q (Data A).

After the end of the period T5 which is the reading operation period,another period T1 (normal operation period) starts, and another datasignal D (Data A+1) is input to the storage device 130.

As described above, when the storage device is driven at a lowfrequency, in the period T1 (normal operation period), the data signal Dis stored in the memory circuit 121 and the input data signal D isoutput as the output signal Q. At the same time, in the period T1, thedata signal D is held in the storage capacitor 102 through the firsttransistor 101.

In the period T3 in which the application of the source voltage Vx isstopped and the period T4 in which the application of the source voltageVx is resumed, the data signal D is stored in the storage capacitor 102.

In the period T1 (normal operation period), the period T2 (writingoperation period), and the period T5 (reading operation period), thedata signal D stored in the memory circuit 121 is output as the outputsignal Q.

Thus, it is possible to provide a storage device in which powerconsumption is reduced by stopping the application of source voltageeven for a short time.

<Configuration of Storage Device in FIG. 4>

FIG. 4 is a more specific circuit diagram of a storage device accordingto this embodiment.

The storage device 100 in FIG. 4 includes the memory circuit 120including the first transistor 101 and the storage capacitor 102 and thememory circuit 121 including an inverter 107 and an inverter 108 each ofwhich includes a second transistor. The memory circuit 121 is a latchcircuit in which the input terminal and the output terminal of theinverter 107 are connected to the output terminal and the input terminalof the inverter 108, respectively.

Note that, for example, an oxide semiconductor transistor is used as thefirst transistor 101 as described above. Having an extremely lowoff-state current, the oxide semiconductor transistor can be included ina nonvolatile memory circuit. The nonvolatile memory circuit 120including such an oxide semiconductor transistor as the first transistorhas an advantage that the properties thereof are not deteriorated due torewriting.

The storage device 100 in FIG. 4 further includes an inverter 105, ananalog switch 104, a selector 106, and an analog switch 109.

An input terminal of the inverter 105 is given a clock signal CLK and iselectrically connected to a first terminal of the analog switch 109. Anoutput terminal of the inverter 105 is electrically connected to a firstterminal of the analog switch 104 and a second terminal of the analogswitch 109. Further, the source voltage Vx which is a high power supplypotential and a low power supply potential (e.g., the ground potentialGND) are applied to the inverter 105.

Note that the inverter 105 may be formed using a second transistor.Specifically, the inverter 105 may include a p-channel transistor, ann-channel transistor, or both of them. More specifically, the inverter105 may be a CMOS circuit in which a p-channel transistor and ann-channel transistor are complementarily connected to each other.

The first terminal of the analog switch 104 is electrically connected tothe output terminal of the inverter 105 and the second terminal of theanalog switch 109. A second terminal of the analog switch 104 iselectrically connected to the first terminal of the analog switch 109.The data signal D is input to a third terminal of the analog switch 104.A fourth terminal of the analog switch 104 is electrically connected toone of the source and the drain of the first transistor 101 and a firstinput terminal of the selector 106.

Note that the analog switch 104 may be formed using a second transistor.Specifically, the analog switch 104 may include a p-channel transistor,an n-channel transistor, or both of them. More specifically, the analogswitch 104 may be an analog switch in which one of a source and a drainof a p-channel transistor is electrically connected to one of a sourceand a drain of an n-channel transistor, and the other of the source andthe drain of the p-channel transistor is electrically connected to theother of the source and the drain of the n-channel transistor.

The control signal OS_WE is input to the gate of the first transistor101. The one of the source and the drain of the first transistor 101 iselectrically connected to the fourth terminal of the analog switch 104and the first input terminal of the selector 106. The other of thesource and the drain of the first transistor 101 is electricallyconnected to one terminal of the storage capacitor 102 and a secondinput terminal of the selector 106. Note that the connection portionbetween the other of the source and the drain of the first transistor101 and the one terminal of the storage capacitor 102 is the node M1.

The one terminal of the storage capacitor 102 is electrically connectedto the other of the source and the drain of the first transistor 101 andthe second input terminal of the selector 106. The other terminal of thestorage capacitor 102 is given a low power supply potential (e.g., theground potential GND).

The first input terminal of the selector 106 is electrically connectedto the fourth terminal of the analog switch 104 and the one of thesource and the drain of the first transistor 101. The second inputterminal of the selector 106 is electrically connected to the other ofthe source and the drain of the first transistor 101 and the oneterminal of the storage capacitor 102. An output terminal of theselector 106 is electrically connected to the input terminal of theinverter 107 and the output terminal of the inverter 108. Further, thesource voltage Vx which is a high power supply potential and a low powersupply potential (e.g., the ground potential GND) are applied to theselector 106.

The selector 106 selects a signal input to the first input terminal or asignal input to the second input terminal in accordance with theselection signal SEL and outputs the selected signal.

The selector 106 may be formed using a second transistor. Specifically,the selector 106 may include a p-channel transistor, an n-channeltransistor, or both of them.

More specifically, the selector 106 may include two analog switches ineach of which one of a source and a drain of a p-channel transistor iselectrically connected to one of a source and a drain of an n-channeltransistor, and the other of the source and the drain of the p-channeltransistor is electrically connected to the other of the source and thedrain of the n-channel transistor. In the selector, a gate of ap-channel transistor in a first analog switch may be electricallyconnected to a gate of an n-channel transistor in a second analogswitch, and a gate of an n-channel transistor in the first analog switchmay be electrically connected to a gate of a p-channel transistor in thesecond analog switch.

The input terminal of the inverter 107 is electrically connected to theoutput terminal of the selector 106 and the output terminal of theinverter 108. The output terminal of the inverter 107 is electricallyconnected to the input terminal of the inverter 108 and a fourthterminal of the analog switch 109. Further, the source voltage Vx whichis a high power supply potential and a low power supply potential (e.g.,the ground potential GND) are applied to the inverter 107.

The inverter 107 may be formed using a second transistor. Specifically,the inverter 107 may include a p-channel transistor, an n-channeltransistor, or both of them. More specifically, the inverter 107 may bea CMOS circuit in which a p-channel transistor and an n-channeltransistor are complementarily connected to each other.

The input terminal of the inverter 108 is electrically connected to theoutput terminal of the inverter 107 and the fourth terminal of theanalog switch 109. The output terminal of the inverter 108 iselectrically connected to the input terminal of the inverter 107 and theoutput terminal of the selector 106. Further, the source voltage Vxwhich is a high power supply potential and a low power supply potential(e.g., the ground potential GND) are applied to the inverter 108.

The inverter 108 may be formed using a second transistor. Specifically,the inverter 108 may include a p-channel transistor, an n-channeltransistor, or both of them. More specifically, the inverter 108 may bea CMOS circuit in which a p-channel transistor and an n-channeltransistor are complementarily connected to each other.

The first terminal of the analog switch 109 is given the clock signalCLK and is electrically connected to the input terminal of the inverter105 and the second terminal of the analog switch 104. The secondterminal of the analog switch 109 is electrically connected to the firstterminal of the analog switch 104 and the output terminal of theinverter 105. The output signal Q is output from a third terminal of theanalog switch 109. The fourth terminal of the analog switch 104 iselectrically connected to the output terminal of the inverter 107 andthe input terminal of the inverter 108.

Note that the analog switch 109 may be formed using a second transistor.Specifically, the analog switch 109 may include a p-channel transistor,an n-channel transistor, or both of them. More specifically, the analogswitch 109 may be an analog switch in which one of a source and a drainof a p-channel transistor is electrically connected to one of a sourceand a drain of an n-channel transistor, and the other of the source andthe drain of the p-channel transistor is electrically connected to theother of the source and the drain of the n-channel transistor.

If necessary, a buffer circuit may be provided between the second inputterminal of the selector 106 and the other of the source and the drainof the first transistor 101/the one terminal of the storage capacitor102. The provision of the buffer circuits makes it possible to expandthe range of the storage device 100, in which operation can beperformed.

<Driving Method of Storage Device>

FIG. 2 is a timing diagram in the case where the storage device 100 inFIG. 4 is driven at a high frequency, and FIG. 3 is a timing diagram inthe case where the storage device 100 in FIG. 4 is driven at a lowfrequency.

Note that a high frequency in this embodiment is a frequency at whichthe data signal D cannot be read and written from/to the storagecapacitor 102 through the first transistor 101. The high frequency is,for example, 1 MHz or higher. Meanwhile, a low frequency in thisembodiment is a frequency at which the data signal D can be read andwritten from/to the storage capacitor 102 through the first transistor101. The low frequency is, for example, lower than 1 MHz.

<High Frequency Operation (FIG. 2)>

First, the operation of the storage device 100 at a high frequency willbe described with reference to FIG. 2.

<Normal Operation Period (Period T1)>

A period in which the storage device 100 operates normally is the periodT1. In the period T1, the clock signal CLK is input to the inputterminal of the inverter 105 and the first terminal of the analog switch109. In response, the signal CLKb whose phase is the inverse of that ofthe clock signal CLK is input to the first terminal of the analog switch104 from the output terminal of the inverter 105.

When the clock signal CLK is changed from the high-level potential (VDD)to the low-level potential (VSS), the analog switch 104 is turned on andthe analog switch 109 is turned off. When the analog switch 104 isturned on, the data signal D is input to the storage device 100 in FIG.4.

In the period T1, the data signal D (Data A) is input to the memorycircuit 121 through the analog switch 104 and the selector 106, and isstored in the memory circuit 121.

After that, when the clock signal CLK is changed from the low-levelpotential (VSS) to the high-level potential (VDD), the analog switch 104is turned off and the analog switch 109 is turned on. Consequently, thedata signal D (Data A) stored in the memory circuit 121 is output as theoutput signal Q (Data A).

In the period T1, the potential of the node M1 may be either thehigh-level potential (VDD) or the low-level potential (VSS) (thepotential of the node M1 is denoted as “XM1” in FIG. 2).

<Writing Operation Period (Period T2)>

A period in which the data signal D is written to the memory circuit 120including the first transistor 101 and the storage capacitor 102 is theperiod T2. The period T2 is a period before the period T3 (a period inwhich the application of source voltage is stopped) to be describedlater. That is to say, the data signal D is written to the memorycircuit 120 before the application of the source voltage Vx is stopped.

At the beginning of the period T2, the control signal OS_WE forcontrolling the first transistor 101 has a voltage at which the datasignal D can be written sufficiently and the voltage is applied to thegate of the first transistor 101, so that the source and the drain ofthe first transistor 101 are electrically connected to each other(brought into an on state). Thus, the data signal D (Data A) is input tothe storage capacitor 102 through the first transistor 101, and is heldby the storage capacitor. The voltage at which the data signal can besufficiently written to the storage capacitor 102 may be either apotential other than the high-level potential (VDD) or the high-levelpotential (VDD).

<Source Voltage Supply Stop Period (Period T3)>

A period in which the application of the source voltage Vx is stopped isthe period T3. At the beginning of the period T3, the application of thesource voltage Vx to the storage device 100 is stopped. Further, thecontrol signal OS_WE for controlling the first transistor 101 is changedto the low-level potential (VSS). Consequently, the first transistor 101is turned off. When the application of the source voltage Vx is stopped,the data (Data A) stored in the memory circuit 121 is erased. However,the data signal D (Data A) stored in the storage capacitor 102 is heldeven after the application of the source voltage Vx to the memorycircuit 121 is stopped. The data signal D (Data A) stored in the storagecapacitor 102 can be held for a long time because the leakage current ofthe first transistor 101 connected to the storage capacitor 102 issignificantly small. Thus, the storage device 100 holds the data signalD (Data A) even after the cessation of the application of the sourcevoltage Vx. In the period T3, the source voltage Vx is not applied tothe storage device 100.

Further, since the application of the source voltage Vx to the storagedevice 100 is stopped, the input of the clock signal CLK is alsostopped.

The data signal D (Data A) stored in the storage capacitor 102 can beheld for a long time because the leakage current of the first transistor101 is significantly low as described above. However, a buffer circuitmay be provided between the second input terminal of the selector 106and the other of the source and the drain of the first transistor101/the one terminal of the storage capacitor 102 as needed. The buffercircuit can compensate the drop of the voltage of the data signal D heldin the storage capacitor 102 when the voltage drops in the sourcevoltage supply stop period. When the buffer circuit is provided so thatthe drop of the voltage can be compensated, it is possible to expand therange of the storage device 100, in which the operation can beperformed.

In the period T3, the data signal D may be either the high-levelpotential (VDD) or the low-level potential (VSS) (the data signal D isdenoted as “XD” in FIG. 2). In addition, the output signal Q is not alsodetermined (the output signal Q is denoted as “XQ” in FIG. 2).

<Source Voltage Supply Resumption Period (Period T4)>

A period in which the application of the source voltage Vx is resumed isthe period T4. At the beginning of the period T4, the application of thesource voltage Vx to the storage device 100 is resumed. At this time,the control signal OS_WE for controlling the first transistor 101 is thelow-level potential (VSS), so that the first transistor 101 remains off.Thus, the data signal D (Data A) remains stored in the storage capacitor102.

The application of the source voltage Vx to the storage device 100 isresumed and the clock signal CLK is set to a high-level potential (VDD).Accordingly, the analog switch 104 is turned off and the analog switch109 is turned on.

<Reading Operation Period (Period T5)>

A period in which the data signal D written to the memory circuit 120 isread is the period T5. At the beginning of the period T5, the selectionsignal SEL is changed from the low-level potential (VSS) to thehigh-level potential (VDD). The selection signal SEL set to thehigh-level potential (VDD) is input to the selector 106, and the datasignal D (Data A) stored in the storage capacitor 102 is input to thememory circuit 121. The analog switch 109 is turned on at the end of theperiod T4, so that the data signal D (Data A) input to the memorycircuit 121 is output as the output signal Q (Data A).

After the end of the period T5 which is the reading operation period,another period T1 (normal operation period) starts, and another datasignal D (Data A+1) is input to the storage device 100.

As described above, in the driving of the storage device at a highfrequency, the high-level potential (VDD) is supplied to the gate of thefirst transistor 101 in the period T2 (writing operation period), sothat the data signal D is stored in the storage capacitor 102 throughthe first transistor 101.

In the period T3 in which the application of the source voltage Vx isstopped and the period T4 in which the application of the source voltageVx is resumed, the data signal D stored in the storage capacitor 102through the first transistor 101 is output as the output signal Q.

In the period T1 (normal operation period), the period T2 (writingoperation period), and the period T5 (reading operation period), thedata signal D stored in the memory circuit 121 is output as the outputsignal Q.

<Low Frequency Operation (FIG. 3)>

Next, the operation of the storage device at a low frequency will bedescribed with reference to FIG. 3.

<Normal Operation Period (Period T1)>

First, as in the case of the operation at a high frequency, in theperiod T1, the clock signal CLK is input to the input terminal of theinverter 105 and the first terminal of the analog switch 109. Inresponse, the signal CLKb whose phase is the inverse of that of theclock signal CLK is input to the first terminal of the analog switch 104from the output terminal of the inverter 105.

When the clock signal CLK is changed from the high-level potential (VDD)to the low-level potential (VSS), the analog switch 104 is turned on andthe analog switch 109 is turned off. When the analog switch 104 isturned on, the data signal D is input to the memory circuit 120.

At the beginning of the period T1, the control signal OS_WE forcontrolling the first transistor 101 is input to the gate of the firsttransistor 101. At this time, the control signal OS_WE is the high-levelpotential (VDD). Accordingly, the first transistor 101 is turned on.Since the first transistor 101 is on, the data signal D (Data A) isstored in the storage capacitor 102 through the analog switch 104 andthe first transistor 101. At this time, the first input terminal and thesecond input terminal of the selector 106 are in a non-conduction stateand in a conduction state, respectively. Thus, the data signal D (DataA) is not input to the memory circuit 121.

In the case where the storage device 100 is driven at a low frequency,the data signal D (Data A) can be written to the memory circuit 120including the first transistor 101 and the storage capacitor 102 in theperiod T1. Thus, even when the drive frequency of the first transistor101 is low, it is possible to secure sufficient time for writing thedata signal D (Data A) to the memory circuit 120. Accordingly, since awriting operation period (Period T2) to be described later can besubstantially omitted, power consumption can be reduced.

After that, when the clock signal CLK is changed from the low-levelpotential (VSS) to the high-level potential (VDD), the analog switch 104is turned off and the analog switch 109 is turned on. Consequently, thedata signal D (Data A) stored in the storage capacitor 102 is written tothe memory circuit 121 through the selector 106. The data signal D (DataA) input to the memory circuit 121 is output as the output signal Q(Data A).

<Writing Operation Period (Period T2)>

In the case where the storage device 100 is driven at a low frequency,the state at the end of the period T1 is maintained in the period T2.

<Source Voltage Supply Stop Period (Period T3)>

Next, the operation in the period T3 will be described. At the beginningof the period T3, the application of the source voltage Vx to thestorage device 100 is stopped. Further, the control signal OS_WE forcontrolling the first transistor 101 is changed to the low-levelpotential (VSS). Consequently, the first transistor 101 is turned off.When the application of the source voltage Vx is stopped, the data (DataA) stored in the memory circuit 121 is erased. However, the data signalD (Data A) stored in the storage capacitor 102 is held even after theapplication of the source voltage Vx to the memory circuit 121 isstopped. The data signal D (Data A) stored in the storage capacitor 102can be held for a long time because the leakage current of the firsttransistor 101 connected to the storage capacitor 102 is significantlysmall. Thus, the storage device 100 holds the data signal D (Data A)even after the cessation of the application of the source voltage Vx. Inthe period T3, the source voltage Vx is not applied to the storagedevice 100 in FIG. 4.

Further, since the application of the source voltage Vx to the storagedevice 100 is stopped, the clock signal CLK is also stopped.

In the period T3, the data signal D may be either the high-levelpotential (VDD) or the low-level potential (VSS) (the data signal D isdenoted as “XD” in FIG. 2). In addition, the output signal Q is not alsodetermined (the output signal Q is denoted as “XQ” in FIG. 2).

<Source Voltage Supply Resumption Period (Period T4)>

Next, the operation in the period T4 will be described. At the beginningof the period T4, the application of the source voltage Vx to thestorage device 100 is resumed. At this time, the control signal OS_WEfor controlling the first transistor 101 is the low-level potential(VSS), so that the first transistor 101 remains off. Thus, the datasignal D (Data A) remains stored in the storage capacitor 102.

The application of the source voltage Vx to the storage device 100 isresumed, the clock signal CLK is set to a high-level potential (VDD).Accordingly, the analog switch 104 is turned off and the analog switch109 is turned on.

<Reading Operation Period (Period T5)>

Next, the operation in the period T5 will be described. At the end ofthe period T4, the selection signal SEL is changed to the high-levelpotential (VDD). The selection signal SEL set to the high-levelpotential (VDD) is input to the selector 106, and the data signal D(Data A) stored in the storage capacitor 102 is input to the memorycircuit 121. The analog switch 109 is turned on at the end of the periodT4, so that the data signal D (Data A) input to the memory circuit 121is output as the output signal Q (Data A).

After the end of the period T5 which is the reading operation period,another period T1 (normal operation period) starts, and another datasignal D (Data A+1) is input to the storage device 100.

As described above, when the storage device is driven at a lowfrequency, in the period T1 (normal operation period), the data signal Dis stored in the memory circuit 121 and the input data signal D isoutput as the output signal Q. At the same time, in the period T1, thedata signal D is held in the storage capacitor 102 through the firsttransistor 101.

In the period T3 in which the application of the source voltage Vx isstopped and the period T4 in which the application of the source voltageVx is resumed, the data signal D is stored in the storage capacitor 102.

In the period T1 (normal operation period), the period T2 (writingoperation period), and the period T5 (reading operation period), thedata signal D stored in the memory circuit 121 is output as the outputsignal Q.

Thus, it is possible to provide a storage device in which powerconsumption is reduced by stopping the application of source voltageeven for a short time.

<Structures and Manufacturing Methods of Oxide Semiconductor Transistorand Second Transistor>

As described above, in the first transistor 101 included in the memorycircuit 120, a channel is formed in an oxide semiconductor layer, andthe memory circuit 121 includes a transistor whose channel is formed ina silicon layer (second transistor). Particularly in the case where thememory circuit 121 includes the inverter 107 and the inverter 108 as inFIG. 4, the inverter 107 and the inverter 108 can each be formed using ap-channel transistor and an n-channel transistor.

Further, the inverter 105, the analog switch 104, the selector 106, andthe analog switch 109 which are illustrated in FIG. 4 can each be alsoformed using a second transistor.

The structures of the first transistor 101 and the second transistor 123will be described below.

FIG. 5A illustrates a cross-sectional structure of the second transistor123. The second transistor 123 in FIG. 5A includes, over a substrate700, an insulating film 701 and a semiconductor film 702 separated froma single crystal semiconductor substrate. The semiconductor film 702includes a channel formation region 710 overlapping with the gateelectrode 707 and a pair of impurity regions 709 between which thechannel formation region 710 is provided. A gate insulating film 703 isprovided between the semiconductor film 702 and a gate electrode 707.Further, an insulating film 712 and an insulating film 713 are formed soas to cover the gate insulating film 703 and the gate electrode 707.

Although there is no particular limitation on a material which can beused for the substrate 700, it is necessary that the material have atleast heat resistance high enough to withstand heat treatment to beperformed later. For example, a glass substrate formed by a fusionprocess or a float process, a quartz substrate, a semiconductorsubstrate, a ceramic substrate, or the like can be used as the substrate700. In the case where a glass substrate is used and the temperature atwhich the heat treatment is to be performed later is high, a glasssubstrate whose strain point is higher than or equal to 730° C. ispreferably used.

Further, in this embodiment, description will be given of a method formanufacturing the second transistor 123, in which the semiconductor film702 is single crystal silicon. Note that a specific example of a methodfor forming the single crystal semiconductor film 702 will be brieflydescribed. First, an ion beam including ions which are accelerated by anelectric field is delivered to a bond substrate which is the singlecrystal semiconductor substrate and a fragile layer which is weakeneddue to local disorder of the crystal structure is formed in a region ata certain depth from a surface of the bond substrate. The depth at whichthe fragile layer is formed can be adjusted by the acceleration energyand the incident angle of the ion beam. Then, the bond substrate and thesubstrate 700 over which an insulating film 701 is formed are attachedto each other so that the insulating film 701 is provided therebetween.The attachment is performed as follows. After the bond substrate and thesubstrate 700 overlap with each other, a pressure of, approximately,greater than or equal to 1 N/cm² and less than or equal to 500 N/cm²,preferably greater than or equal to 11 N/cm² and less than or equal to20 N/cm² is applied to part of the bond substrate and part of thesubstrate 700. When the pressure is applied, bonding between the bondsubstrate and the insulating film 701 starts from the parts, resultingin the bonding in the entire surface where the bond substrate and theinsulating film 701 are in close contact with each other. Subsequently,heat treatment is performed, whereby microvoids that exist in thefragile layer are combined and thus increase in volume. As a result, thesingle crystal semiconductor film which is part of the bond substrate isseparated from the bond substrate along the fragile layer. The heattreatment is performed at a temperature not exceeding the strain pointof the substrate 700. Then, the single crystal semiconductor film isprocessed into a desired shape by etching or the like, so that thesemiconductor film 702 can be formed.

In order to control the threshold voltage, an impurity element impartingp-type conductivity, such as boron, aluminum, or gallium, or an impurityelement imparting n-type conductivity, such as phosphorus or arsenic,may be added to the semiconductor film 702. An impurity element forcontrolling the threshold voltage may be added to the semiconductor filmnot etched to have a predetermined shape or may be added to thesemiconductor film 702 etched to have a predetermined shape.Alternatively, the impurity element for controlling the thresholdvoltage may be added to the bond substrate. Still alternatively, theimpurity element may be added to the bond substrate in order to roughlycontrol the threshold voltage, and the impurity element may be furtheradded to the semiconductor film not processed to have a predeterminedshape (not patterned) or the semiconductor film 702 processed to have apredetermined shape, in order to finely control the threshold voltage.

The semiconductor film 702 includes the channel formation region 710overlapping with the gate electrode 707 and the pair of impurity regions709 between which the channel formation region 710 is provided.

The pair of impurity regions 709 includes an impurity element impartingone conductivity. As the impurity element imparting n-type conductivity,for example, phosphorus (P) and arsenic (As) are given; as the impurityelement imparting p-type conductivity, for example, boron (B) is given.

Note that although an example in which a single crystal semiconductorfilm is used is described in this embodiment, one embodiment of thepresent invention is not limited thereto. For example, apolycrystalline, microcrystalline, or amorphous semiconductor film whichis formed over the insulating film 701 by a vapor deposition method maybe used. Alternatively, the above semiconductor film may be crystallizedby a known technique. As the known technique of crystallization, a lasercrystallization method using a laser beam and a crystallization methodusing a catalytic element are given. Alternatively, a crystallizationmethod using a catalytic element and a laser crystallization method maybe used in combination. When a highly-heat-resistant substrate such as aquartz substrate is used, it is possible to combine any of the followingcrystallization methods: a thermal crystallization method using anelectrically heated oven, a lamp annealing crystallization method usinginfrared light, a crystallization method using a catalytic element, anda high-temperature annealing method in which the temperature isapproximately 950° C.

The gate insulating film 703 can be formed by oxidizing or nitriding asurface of the semiconductor film 702 by high-density plasma treatment,heat treatment, or the like. The high-density plasma treatment isperformed using, for example, a mixed gas of a rare gas such as He, Ar,Kr, or Xe, and a gas such as oxygen, nitrogen oxide, ammonia, nitrogen,hydrogen, or the like. In this case, by exciting plasma by introductionof microwaves, high-density plasma with a low electron temperature canbe generated. By oxidizing or nitriding the surface of the semiconductorfilm with oxygen radicals (including OH radicals in some cases) ornitrogen radicals (including NH radicals in some cases) generated bysuch high-density plasma, an insulating film with a thickness of 1 nm to20 nm, preferably 5 nm to 10 nm can be formed in contact with thesemiconductor film. For example, a surface of the semiconductor film 702is oxidized or nitrided using nitrous oxide (N₂O) diluted with one partto three parts (flow rate) of Ar, by application of a microwave (2.45GHz) power of 3 kW to 5 kW at a pressure of 10 Pa to 30 Pa. Through thistreatment, an insulating film having a thickness of 1 nm to 10 nm(preferably 2 nm to 6 nm) is formed. Further, nitrous oxide (N₂O) andsilane (SiH₄) are introduced and a microwave (2.45 GHz) power of 3 kW to5 kW is applied with a pressure of 10 Pa to 30 Pa so that a siliconoxynitride film is formed by a vapor deposition method, whereby the gateinsulating film is formed. With a combination of a solid-phase reactionand a reaction by a vapor deposition method, the gate insulating filmcan have low interface state density and high breakdown voltage.

The oxidation or nitridation of the semiconductor film by thehigh-density plasma treatment proceeds by solid-phase reaction. Thus,interface state density between the gate insulating film 703 and thesemiconductor film 702 can be extremely low. Further, by directlyoxidizing or nitriding the semiconductor film 702 by high-density plasmatreatment, variation in thickness of the insulating film to be formedcan be suppressed. Moreover, in the case where the semiconductor filmhas crystallinity, oxidizing the surface of the semiconductor film withsolid-phase reaction by high-density plasma treatment makes it possibleto suppress fast oxidation only in a crystal grain boundary; therefore,the gate insulating film with uniformity and low interface state densitycan be formed. Variations in characteristics of transistors eachincluding an insulating film formed by high-density plasma treatment aspart or the whole of a gate insulating film can be suppressed.

The gate insulating film 703 may be formed to have a single-layerstructure or a layered structure using a film including silicon oxide,silicon nitride oxide, silicon oxynitride, silicon nitride, hafniumoxide, aluminum oxide, tantalum oxide, yttrium oxide, hafnium silicate(HfSi_(x)O_(y), (x>0, y>0)), hafnium silicate (HfSi_(x)O_(y) (x>0, y>0))to which nitrogen is added, hafnium aluminate (HfAl_(x)O_(y), (x>0,y>0)) to which nitrogen is added, or the like by a plasma CVD method, asputtering method, or the like.

Note that, in this specification, an oxynitride refers to a material inwhich the oxygen content is higher than the nitrogen content, and anitride oxide refers to a material in which the nitrogen content ishigher than the oxygen content.

The range of the thickness of the gate insulating film 703 can be, forexample, greater than or equal to 1 nm and less than or equal to 100 nm,preferably greater than or equal to 10 nm and less than or equal to 50nm. In this embodiment, a single-layer insulating film including siliconoxide is formed as the gate insulating film 703 by a plasma CVD method.

As a material of the gate electrode 707, tantalum (Ta), tungsten (W),titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium(Cr), niobium (Nb), or the like can be used. An alloy containing theabove metal as a main component or a compound containing the above metalmay be used. Alternatively, the gate electrode 707 may be formed using asemiconductor such as polycrystalline silicon doped with an impurityelement imparting conductivity to the semiconductor film, such asphosphorus.

Note that although the gate electrode 707 is formed using a single-layerconductive film in this embodiment, one embodiment of the presentinvention is not limited to this structure. The gate electrode 707 maybe formed of a plurality of conductive films stacked.

As for a combination of two conductive films, tantalum nitride ortantalum can be used for a first conductive film and tungsten can beused for a second conductive film. Besides, the following combinationsare given: tungsten nitride and tungsten, molybdenum nitride andmolybdenum, aluminum and tantalum, aluminum and titanium, and the like.Since tungsten and tantalum nitride have high heat resistance, heattreatment aimed at thermal activation can be performed in subsequentsteps after formation of the two conductive films. Alternatively, as acombination of the two conductive films, for example, nickel silicideand silicon doped with an impurity element which imparts n-typeconductivity, tungsten silicide and silicon doped with an impurityelement which imparts n-type conductivity, or the like may be used.

In the case of employing a three-layer structure in which threeconductive films are stacked, a layered structure of a molybdenum film,an aluminum film, and a molybdenum film is preferable.

A light-transmitting oxide conductive film of indium oxide, a mixture ofindium oxide and tin oxide, a mixture of indium oxide and zinc oxide,zinc oxide, zinc aluminum oxide, zinc aluminum oxynitride, zinc galliumoxide, or the like may be used for the gate electrode 707.

Further, insulating films 712 and 713 are formed so as to cover the gateinsulating film 703 and the gate electrode 707. Specifically, aninorganic insulating film of silicon oxide, silicon nitride, siliconnitride oxide, silicon oxynitride, aluminum nitride, aluminum nitrideoxide, or the like can be used as the insulating films 712 and 713. Inparticular, the insulating films 712 and 713 are preferably formed usinga low dielectric constant (low-k) material because capacitance due tooverlapping of electrodes or wirings can be sufficiently reduced. Notethat a porous insulating film including such a material may be used asthe insulating films 712 and 713. Since the porous insulating film haslower dielectric constant than a dense insulating film, parasiticcapacitance due to electrodes or wirings can be further reduced.

In this embodiment, an example is described in which silicon oxynitrideis used for the insulating film 712 and silicon nitride oxide is usedfor the insulating film 713. In addition, in this embodiment, althoughthe insulating films 712 and 713 are formed over the gate electrode 707,according to one embodiment of the present invention, only oneinsulating film may be formed over the gate electrode 707, or three ormore insulating films may be stacked.

The volatile memory circuit 121 is formed using the second transistor123 described above.

Next, a structure of the first transistor 101 will be described. FIG. 5Billustrates a cross-sectional structure of the first transistor 101. Thefirst transistor 101 in FIG. 5B includes, over a substrate 731, aninsulating film 732 and an oxide semiconductor layer 716. Over the oxidesemiconductor layer 716, a conductive film 719, a conductive film 720,the gate insulating film 703, and a gate electrode 722 are sequentiallyprovided.

In the first transistor 101 in FIG. 5B, the gate electrode 707 isprovided over the oxide semiconductor layer 716, and the conductive film719 and the conductive film 720 are formed over the oxide semiconductorlayer 716. In this embodiment, such a transistor is referred to as atop-gate top-contact transistor.

In the first transistor 101 in FIG. 5B, a channel formation region isformed in a region where the oxide semiconductor layer 716 and the gateelectrode 707 overlap with each other with the gate insulating film 703laid therebetween. The conductive films 719 and 720 function as sourceand drain electrodes. Source and drain regions of the first transistor101 in FIG. 5B are formed in a region where the oxide semiconductorlayer 716 and the conductive film 719 overlap with each other and aregion where the oxide semiconductor layer 716 and the conductive film720 overlap with each other.

Materials similar to those of the substrate 700 and the insulating film701 may be used for the substrate 731 and the insulating film 732,respectively. Alternatively, after being formed, the second transistor123 may be covered with an insulating film having a flat surface, andthe first transistor 101 may be formed above the second transistor 123with the use of the flat insulating film instead of the insulating film701.

The oxide semiconductor layer 716 can be formed by processing an oxidesemiconductor film formed over the insulating film 701 into a desiredshape. The range of the thickness of the oxide semiconductor film isgreater than or equal to 2 nm and less than or equal to 200 nm,preferably greater than or equal to 3 nm and less than or equal to 50nm, more preferably greater than or equal to 3 nm and less than or equalto 20 nm. The oxide semiconductor film is formed by a sputtering methodusing an oxide semiconductor as a target. Moreover, the oxidesemiconductor film can be formed by a sputtering method or the like in arare gas (e.g., argon) atmosphere, an oxygen atmosphere, or a mixedatmosphere of a rare gas (e.g., argon) and oxygen.

A method for forming the oxide semiconductor film will be describedbelow. The oxide semiconductor film is formed by a sputtering method, anevaporation method, a PCVD method, a PLD method, an ALD method, an MBEmethod, or the like.

The oxide semiconductor film is preferably formed by a sputtering methodin an oxygen gas atmosphere at a substrate heating temperature in therange of 100° C. to 600° C., preferably 150° C. to 550° C., and morepreferably 200° C. to 500° C. The thickness of the oxide semiconductorfilm is greater than or equal to 1 nm and less than or equal to 40 nm,and preferably greater than or equal to 3 nm and less than or equal to20 nm. The higher the substrate heating temperature in deposition is,the lower the impurity concentration of the obtained oxide semiconductorfilm is. Further, the atomic arrangement in the oxide semiconductor filmis ordered, the density thereof is increased, and thus a polycrystal ora c-axis aligned crystal (CAAC) is likely to be formed. Furthermore,deposition in an oxygen gas atmosphere also facilitates formation of apolycrystal or CAAC because an unnecessary atom is not contained in theoxide semiconductor film. Note that a mixed gas atmosphere containing anoxygen gas and a rare gas may be used. In that case, the percentage ofthe oxygen gas is higher than or equal to 30 vol. %, preferably higherthan or equal to 50 vol. %, more preferably higher than or equal to 80vol. %. As the oxide semiconductor film is thinner, the short channeleffect of the transistor can be reduced. However, when the semiconductorfilm is too thin, it is significantly influenced by interfacescattering; thus, the field-effect mobility might be decreased.

In the case of forming a film of an In—Ga—Zn—O-based material as theoxide semiconductor film by a sputtering method, it is preferable to usean In—Ga—Zn—O target having the following atomic ratio: the atomic ratioof In:Ga:Zn is 1:1:1, 4:2:3, 3:1:2, 1:1:2, 2:1:3, or 3:1:4. When theoxide semiconductor film is formed using an In—Ga—Zn—O target having theabove atomic ratio, a polycrystal or CAAC is easily formed.

In the case of forming a film of an In—Sn—Zn—O-based material as theoxide semiconductor film by a sputtering method, it is preferable to usean In—Sn—Zn—O target having the following atomic ratio: the atomic ratioof In:Sn:Zn is 1:1:1, 2:1:3, 1:2:2, or 4:9:7. When the oxidesemiconductor film is formed using an In—Sn—Zn—O target having the aboveatomic ratio, a polycrystal or CAAC is easily formed.

Next, heat treatment is performed. The heat treatment is performed in areduced pressure atmosphere, an inert atmosphere, or an oxidationatmosphere. By the heat treatment, the impurity concentration in theoxide semiconductor film can be reduced.

The heat treatment is preferably performed in such a manner that afterheat treatment in a reduced pressure atmosphere or an inert gasatmosphere is completed, the atmosphere is changed to an oxidationatmosphere while the temperature is kept, and heat treatment is furtherperformed. When the heat treatment is performed in a reduced pressureatmosphere or an inert atmosphere, the impurity concentration in theoxide semiconductor film can be reduced; however, oxygen vacancies arecaused at the same time. By the heat treatment in the oxidationatmosphere, the caused oxygen vacancies can be reduced.

By performing heat treatment on the oxide semiconductor film in additionto the substrate heating in deposition, the impurity level in the filmcan be significantly reduced. Accordingly, the field-effect mobility ofthe transistor can be increased so as to be close to ideal field-effectmobility to be described later.

Note that before the oxide semiconductor film is formed by a sputteringmethod, dust attached to surfaces of the insulating films 712 and 713 ispreferably removed by reverse sputtering in which an argon gas isintroduced and plasma is generated. The reverse sputtering refers to amethod in which, without application of voltage to the target side, anRF power source is used for application of voltage to the substrate sidein an argon atmosphere to generate plasma in the vicinity of thesubstrate to modify a surface. Note that instead of an argon atmosphere,a nitrogen atmosphere, a helium atmosphere, or the like may be used.Alternatively, an argon atmosphere to which oxygen, nitrous oxide, orthe like is added may be used. Still alternatively, an argon atmosphereto which chlorine, carbon tetrafluoride, or the like is added may beused.

An oxide semiconductor used for the oxide semiconductor transistorpreferably contains at least indium (In) or zinc (Zn). In particular, Inand Zn are preferably contained. As a stabilizer for reducing change inelectric characteristics of a transistor including the oxidesemiconductor, gallium (Ga) is preferably additionally contained. Tin(Sn) is preferably contained as a stabilizer. Hafnium (Hf) is preferablycontained as a stabilizer. Aluminum (Al) is preferably contained as astabilizer.

As another stabilizer, one or plural kinds of lanthanoid such aslanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium(Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy),holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium(Lu) may be contained.

As the oxide semiconductor, for example, the following can be used: afour-component metal oxide such as an In—Sn—Ga—Zn-based oxide, anIn—Hf—Ga—Zn-based oxide, an In—Al—Ga—Zn-based oxide, anIn—Sn—Al—Zn-based oxide, an In—Sn—Hf—Zn-based oxide, or anIn—Hf—Al—Zn-based oxide, a three-component metal oxide such as anIn—Ga—Zn-based oxide (also referred to as IGZO), an In—Sn—Zn-basedoxide, an In—Al—Zn-based oxide, a Sn—Ga—Zn-based oxide, anAl—Ga—Zn-based oxide, a Sn—Al—Zn-based oxide, an In—Hf—Zn-based oxide,an In—La—Zn-based oxide, an In—Ce—Zn-based oxide, an In—Pr—Zn-basedoxide, an In—Nd—Zn-based oxide, an In—Sm—Zn-based oxide, anIn—Eu—Zn-based oxide, an In—Gd—Zn-based oxide, an In—Tb—Zn-based oxide,an In—Dy—Zn-based oxide, an In—Ho—Zn-based oxide, an In—Er—Zn-basedoxide, an In—Tm—Zn-based oxide, an In—Yb—Zn-based oxide, or anIn—Lu—Zn-based oxide, a two-component metal oxide such as an In—Zn-basedoxide, a Sn—Zn-based oxide, an Al—Zn-based oxide, a Zn—Mg-based oxide, aSn—Mg-based oxide, an In—Mg-based oxide, or an In—Ga-based oxide, or asingle-component metal oxide such as an In-based oxide, a Sn-basedoxide, or a Zn—O-based oxide. In addition, any of the above oxidesemiconductors may contain an element other than In, Ga, Sn, and Zn, forexample, SiO₂.

Note that here, for example, an “In—Ga—Zn-based oxide” means an oxidecontaining In, Ga, and Zn and there is no particular limitation on theratio of In, Ga, and Zn. Further, the In—Ga—Z-based oxide may contain ametal element other than In, Ga, and Zn.

Alternatively, a material represented by InMO₃(ZnO)_(m) (m>0 issatisfied, and m is not an integer) may be used as an oxidesemiconductor. Note that M represents one or more metal elementsselected from Ga, Fe, Mn, and Co. For example, M can be Ga, Ga and Al,Ga and Mn, Ga and Co, or the like. Still alternatively, a materialrepresented by In₃SnO₅(ZnO)_(n) (n>0 is satisfied, and n is an integer)may be used as an oxide semiconductor.

For example, an In—Ga—Zn-based oxide with an atomic ratio ofIn:Ga:Zn=1:1:1 (=⅓:⅓:⅓) or In:Ga:Zn=2:2:1 (=⅖:⅖:⅕), or any of oxideswhose composition is in the neighborhood of the above compositions canbe used. Alternatively, an In—Sn—Zn-based oxide with an atomic ratio ofIn:Sn:Zn=1:1:1 (=⅓:⅓:⅓), In:Sn:Zn=2:1:3 (=⅓:⅙:½), or In:Sn:Zn=2:1:5(=¼:⅛:⅝), or any of oxides whose composition is in the neighborhood ofthe above compositions may be used.

Note that one embodiment of the disclosed invention is not limitedthereto, and a material having appropriate composition depending onsemiconductor characteristics (mobility, threshold, variation, and thelike) may be used. Further, it is preferable to appropriately set thecarrier density, the impurity concentration, the defect density, theatomic ratio of a metal element and oxygen, the interatomic distance,the density, or the like in order to obtain necessary semiconductorcharacteristics.

For example, with an In—Sn—Zn-based oxide, high mobility can be realizedrelatively easily. However, even with an In—Ga—Zn-based oxide, mobilitycan be increased by reducing the defect density in the bulk.

Note that for example, the expression “the composition of an oxide withan atomic ratio of In:Ga:Zn=a:b:c (a+b+c=1) is in the neighborhood ofthe composition of an oxide with an atomic ratio of In:Ga:Zn=A:B:C(A+B+C=1)” means that a, b, and c satisfy the following relation:(a−A)²+(b−B)²+(c−C)²≦r². A variable r may be 0.05, for example. The samecan be applied to other oxides.

The oxide semiconductor may be either a single crystal oxidesemiconductor or a non-single-crystal oxide semiconductor. In the lattercase, the non-single-crystal oxide semiconductor may be either amorphousor polycrystalline. Further, the oxide semiconductor may have either anamorphous structure including a portion having crystallinity or anon-amorphous structure.

In an oxide semiconductor in an amorphous state, a flat surface can beobtained with relative ease, so that when a transistor is manufacturedwith the use of the oxide semiconductor, interface scattering can besuppressed, and relatively high mobility can be obtained with relativeease.

In an oxide semiconductor having crystallinity, defects in the bulk canbe further reduced, and when surface evenness is improved, mobilityhigher than that of an oxide semiconductor in an amorphous state can berealized. In order to improve the surface evenness, the oxidesemiconductor is preferably deposited over a flat surface. Specifically,the oxide semiconductor is preferably deposited over a surface with anaverage surface roughness (Ra) of less than or equal to 1 nm, preferablyless than or equal to 0.3 nm, more preferably less than or equal to 0.1nm.

Note that Ra in this specification refers to a centerline averageroughness obtained by three-dimensionally expanding a centerline averageroughness defined by JIS B0601 so as to be applied to a plane to bemeasured. The Ra can be expressed as an “average value of absolutevalues of deviations from a reference plane to a designated plane”, andis defined with the following equation.

$\begin{matrix}{{Ra} = {\frac{1}{S_{0}}{\int_{y_{1}}^{y_{2}}{\int_{x_{1}}^{x_{2}}{{{{f\left( {x,y} \right)} - Z_{0}}}\ {x}\ {y}}}}}} & \left\lbrack {{EQUATION}\mspace{14mu} 1} \right\rbrack\end{matrix}$

Note that in Equation 1, S₀ represents the area of a measurement surface(a rectangular region which is defined by four points represented by thecoordinates (x₁, y₁), (x₁, y₂), (x₂, y₁), and (x₂, y₂)), and Z₀represents the average height of a measurement surface. Ra can bemeasured using an atomic force microscope (AFM).

Note that the oxide semiconductor may be amorphous or crystalline. As acrystalline oxide semiconductor, an oxide including crystals with c-axisorientation (also referred to as CAAC) is also preferable because theadvantageous effect of improving the reliability of a transistor can beobtained.

A sputtering method may be performed to form an oxide semiconductor filmincluding CAAC. In order to obtain CAAC by a sputtering method, it isimportant to form hexagonal crystals in an initial stage of formation ofan oxide semiconductor film and to cause crystal growth from thehexagonal crystals as seed crystals. In order to achieve this, it ispreferable that the distance between the target and the substrate bemade to be longer (e.g., 150 mm to 200 mm) and the range of thesubstrate heating temperature be 100° C. to 500° C., more preferably200° C. to 400° C., still more preferably 250° C. to 300° C. In additionto this, the formed oxide semiconductor film is subjected to heattreatment at a temperature exceeding the substrate heating temperaturein the deposition. Consequently, micro-defects in the film and defectsat the interface between films can be compensated.

Note that in this specification, a hexagonal crystal structure isincluded in a hexagonal system. The hexagonal system includes a trigonalsystem and a hexagonal system of seven crystal systems.

An oxide including CAAC, which has a triangular or hexagonal atomicarrangement when seen from the direction of an a-b plane, a surface, oran interface, will be specifically described below. In the crystal,metal atoms are arranged in a layered manner, or metal atoms and oxygenatoms are arranged in a layered manner along the c-axis, and thedirection of the a-axis or the b-axis is varied in the a-b plane (thecrystal rotates around the c-axis).

In a broad sense, an “oxide including CAAC” means a non-single-crystaloxide including a phase which has a triangular, hexagonal, regulartriangular, or regular hexagonal atomic arrangement when seen from thedirection perpendicular to the a-b plane and in which metal atoms arearranged in a layered manner or metal atoms and oxygen atoms arearranged in a layered manner when seen from the direction perpendicularto the c-axis direction.

The CAAC is not a single crystal, but this does not mean that the CAACis composed of only an amorphous component. Although the CAAC includes acrystallized portion (crystalline portion), a boundary between onecrystalline portion and another crystalline portion is not clear in somecases.

In the case where oxygen is included in the CAAC, nitrogen may besubstituted for part of oxygen included in the CAAC. The c-axes ofindividual crystalline portions included in the CAAC may be aligned inone direction (e.g., the direction perpendicular to a surface of asubstrate over which the CAAC is formed or a surface of the CAAC).Alternatively, the normals of the a-b planes of the individualcrystalline portions included in the CAAC may be aligned in onedirection (e.g., the direction perpendicular to a surface of a substrateover which the CAAC is formed or a surface of the CAAC).

The CAAC can be a conductor, a semiconductor, or an insulator, dependingon its composition or the like. The CAAC transmits or does not transmitvisible light depending on its composition or the like.

As an example of such a CAAC, there is a crystal which is formed into afilm shape and has a triangular or hexagonal atomic arrangement whenobserved from the direction perpendicular to a surface of the film or asurface of a substrate over which the CAAC is formed, and in which metalatoms are arranged in a layered manner or metal atoms and oxygen atoms(or nitrogen atoms) are arranged in a layered manner when a crosssection of the film is observed.

An example of a crystal structure of the CAAC will be described indetail with reference to FIGS. 15A to 15E, FIGS. 16A to 16C, FIGS. 17Ato 17C, and FIGS. 32A and 32B. In FIGS. 15A to 15E, FIGS. 16A to 16C,FIGS. 17A to 17C, and FIGS. 32A and 32B, the vertical directioncorresponds to the c-axis direction and a plane perpendicular to thec-axis direction corresponds to the a-b plane, unless otherwisespecified. When the expressions “upper half” and “lower half” are simplyused, they refer to the upper half above the a-b plane and the lowerhalf below the a-b plane (the upper half and the lower half with respectto the a-b plane). Further, in FIGS. 15A to 15E, O surrounded by acircle represents tetracoordinate O and O surrounded by a double circlerepresents tricoordinate O.

FIG. 15A illustrates a structure including one hexacoordinate In atomand six tetracoordinate oxygen (hereinafter referred to astetracoordinate O) atoms proximate to the In atom. Here, a structureincluding one metal atom and oxygen atoms proximate thereto is referredto as a small group. The structure in FIG. 15A is actually an octahedralstructure, but is illustrated as a planar structure for simplicity. Notethat three tetracoordinate O atoms exist in each of the upper half andthe lower half in FIG. 15A. In the small group illustrated in FIG. 15A,electric charge is 0.

FIG. 15B illustrates a structure including one pentacoordinate Ga atom,three tricoordinate oxygen (hereinafter referred to as tricoordinate O)atoms proximate to the Ga atom, and two tetracoordinate O atomsproximate to the Ga atom. All the tricoordinate O atoms exist on the a-bplane. One tetracoordinate O atom exists in each of the upper half andthe lower half in FIG. 15B. An In atom can also have the structureillustrated in FIG. 15B because an In atom can have five ligands. In thesmall group illustrated in FIG. 15B, electric charge is 0.

FIG. 15C illustrates a structure including one tetracoordinate Zn atomand four tetracoordinate O atoms proximate to the Zn atom. In FIG. 15C,one tetracoordinate O atom exists in the upper half and threetetracoordinate O atoms exist in the lower half. Alternatively, threetetracoordinate O atoms may exist in the upper half and onetetracoordinate O atom may exist in the lower half in FIG. 15C. In thesmall group illustrated in FIG. 15C, electric charge is 0.

FIG. 15D illustrates a structure including one hexacoordinate Sn atomand six tetracoordinate O atoms proximate to the Sn atom. In FIG. 15D,three tetracoordinate O atoms exist in each of the upper half and thelower half. In the small group illustrated in FIG. 15D, electric chargeis +1.

FIG. 15E illustrates a small group including two Zn atoms. In FIG. 15E,one tetracoordinate O atom exists in each of the upper half and thelower half. In the small group illustrated in FIG. 15E, electric chargeis −1.

Here, a plurality of small groups form a medium group, and a pluralityof medium groups form a large group (also referred to as a unit cell).

Now, a rule of bonding between the small groups will be described. Thethree O atoms in the upper half with respect to the hexacoordinate Inatom each have three proximate In atoms in the downward direction, andthe three O atoms in the lower half each have three proximate In atomsin the upward direction. The one O atom in the upper half with respectto the pentacoordinate Ga atom has one proximate Ga atom in the downwarddirection, and the one O atom in the lower half has one proximate Gaatom in the upward direction. The one O atom in the upper half withrespect to the tetracoordinate Zn atom has one proximate Zn atom in thedownward direction, and the three O atoms in the lower half each havethree proximate Zn atoms in the upward direction. In this manner, thenumber of the tetracoordinate O atoms above the metal atom is equal tothe number of the metal atoms proximate to and below each of thetetracoordinate O atoms. Similarly, the number of the tetracoordinate Oatoms below the metal atom is equal to the number of the metal atomsproximate to and above each of the tetracoordinate O atoms. Since thecoordination number of the tetracoordinate O atom is 4, the sum of thenumber of the metal atoms proximate to and below the O atom and thenumber of the metal atoms proximate to and above the O atom is 4.Accordingly, when the sum of the number of tetracoordinate O atoms abovea metal atom and the number of tetracoordinate O atoms below anothermetal atom is 4, the two kinds of small groups including the metal atomscan be bonded. For example, in the case where the hexacoordinate metal(In or Sn) atom is bonded through three tetracoordinate O atoms in thelower half, it is bonded to the pentacoordinate metal (Ga or In) atom orthe tetracoordinate metal (Zn) atom.

A metal atom whose coordination number is 4, 5, or 6 is bonded toanother metal atom through a tetracoordinate O atom in the c-axisdirection. In addition to the above, a medium group can be formed in adifferent manner by combining a plurality of small groups so that thetotal electric charge of the layered structure is 0.

FIG. 16A illustrates a model of a medium group included in a layeredstructure of an In—Sn—Zn—O-based material. FIG. 16B illustrates a largegroup including three medium groups. Note that FIG. 16C illustrates anatomic arrangement in the case where the layered structure in FIG. 16Bis observed from the c-axis direction.

In FIG. 16A, a tricoordinate O atom is omitted for simplicity, and atetracoordinate O atom is illustrated by a circle; the number in thecircle shows the number of tetracoordinate O atoms. For example, threetetracoordinate O atoms existing in each of the upper half and the lowerhalf with respect to a Sn atom are denoted by circled 3. Similarly, inFIG. 16A, one tetracoordinate O atom existing in each of the upper halfand the lower half with respect to an In atom is denoted by circled 1.FIG. 16A also illustrates a Zn atom proximate to one tetracoordinate Oatom in the lower half and three tetracoordinate O atoms in the upperhalf, and a Zn atom proximate to one tetracoordinate O atom in the upperhalf and three tetracoordinate O atoms in the lower half.

In the medium group included in the layered structure of theIn—Sn—Zn—O-based material in FIG. 16A, in the order starting from thetop, a Sn atom proximate to three tetracoordinate O atoms in each of theupper half and the lower half is bonded to an In atom proximate to onetetracoordinate O atom in each of the upper half and the lower half, theIn atom is bonded to a Zn atom proximate to three tetracoordinate Oatoms in the upper half, the Zn atom is bonded to an In atom proximateto three tetracoordinate O atoms in each of the upper half and the lowerhalf through one tetracoordinate O atom in the lower half with respectto the Zn atom, the In atom is bonded to a small group that includes twoZn atoms and is proximate to one tetracoordinate O atom in the upperhalf, and the small group is bonded to a Sn atom proximate to threetetracoordinate O atoms in each of the upper half and the lower halfthrough one tetracoordinate O atom in the lower half with respect to thesmall group. A plurality of such medium groups is bonded, so that alarge group is formed.

Here, electric charge for one bond of a tricoordinate O atom andelectric charge for one bond of a tetracoordinate O atom can be assumedto be −0.667 and −0.5, respectively. For example, electric charge of a(hexacoordinate or pentacoordinate) In atom, electric charge of a(tetracooridnate) Zn atom, and electric charge of a (pentacoordinate orhexacoordinate) Sn atom are +3, +2, and +4, respectively. Accordingly,electric charge in a small group including a Sn atom is +1. Therefore,electric charge of −1, which cancels +1, is needed to form a layeredstructure including a Sn atom. As a structure having electric charge of−1, the small group including two Zn atoms as illustrated in FIG. 15Ecan be given. For example, with one small group including two Zn atoms,electric charge of one small group including a Sn atom can be cancelled,so that the total electric charge of the layered structure can be 0.

Specifically, when the large group illustrated in FIG. 16B is repeated,an In—Sn—Zn—O-based crystal (In₂SnZn₃O₈) can be obtained. Note that alayered structure of the obtained In—Sn—Zn—O-based crystal can beexpressed by a composition formula, In₂SnZn₂O₇(ZnO)_(m) (m is 0 or anatural number).

The above-described rule also applies to the following oxides:four-component metal oxides such as an In—Sn—Ga—Zn-based oxide, anIn—Hf—Ga—Zn-based oxide, an In—Al—Ga—Zn-based oxide, anIn—Sn—Al—Zn-based oxide, an In—Sn—Hf—Zn-based oxide, and anIn—Hf—Al—Zn-based oxide, three-component metal oxides such as anIn—Ga—Zn-based oxide (also referred to as IGZO), an In—Al—Zn-basedoxide, a Sn—Ga—Zn-based oxide, an Al—Ga—Zn-based oxide, a Sn—Al—Zn-basedoxide, an In—Hf—Zn-based oxide, an In—La—Zn-based oxide, anIn—Ce—Zn-based oxide, an In—Pr—Zn-based oxide, an In—Nd—Zn-based oxide,an In—Sm—Zn-based oxide, an In—Eu—Zn-based oxide, an In—Gd—Zn-basedoxide, an In—Tb—Zn-based oxide, an In—Dy—Zn-based oxide, anIn—Ho—Zn-based oxide, an In—Er—Zn-based oxide, an In—Tm—Zn-based oxide,an In—Yb—Zn-based oxide, and an In—Lu—Zn-based oxide, two-componentmetal oxides such as an In—Zn-based oxide, a Sn—Zn-based oxide, anAl—Zn-based oxide, a Zn—Mg-based oxide, a Sn—Mg-based oxide, anIn—Mg-based oxide, and an In—Ga-based oxide, and the like.

As an example, FIG. 17A illustrates a model of a medium group includedin a layered structure of an In—Ga—Zn—O-based material.

In the medium group included in the layered structure of theIn—Ga—Zn—O-based material in FIG. 17A, in the order starting from thetop, an In atom proximate to three tetracoordinate O atoms in each of anupper half and a lower half is bonded to a Zn atom proximate to onetetracoordinate O atom in an upper half, the Zn atom is bonded to a Gaatom proximate to one tetracoordinate O atom in each of an upper halfand a lower half through three tetracoordinate O atoms in a lower halfwith respect to the Zn atom, and the Ga atom is bonded to an In atomproximate to three tetracoordinate O atoms in each of an upper half anda lower half through one tetracoordinate O atom in a lower half withrespect to the Ga atom. A plurality of such medium groups is bonded, sothat a large group is formed.

FIG. 17B illustrates a large group including three medium groups. Notethat FIG. 17C illustrates an atomic arrangement in the case where thelayered structure in FIG. 17B is observed from the c-axis direction.

Here, since electric charge of a (hexacoordinate or pentacoordinate) Inatom, electric charge of a (tetracoordinate) Zn atom, and electriccharge of a (pentacoordinate) Ga atom are +3, +2, +3, respectively,electric charge of a small group including any of an In atom, a Zn atom,and a Ga atom is 0. As a result, the total electric charge of a mediumgroup having a combination of such small groups is always 0.

In order to form the layered structure of the In—Ga—Zn—O-based material,a large group can be formed using not only the medium group illustratedin FIG. 17A but also a medium group in which the arrangement of the Inatom, the Ga atom, and the Zn atom is different from that in FIG. 17A.

Specifically, when the large group illustrated in FIG. 17B is repeated,an In—Ga—Zn—O-based crystal can be obtained. Note that a layeredstructure of the obtained In—Ga—Zn—O-based crystal can be expressed by acomposition formula, InGaO₃(ZnO)_(n) (n is a natural number).

In the case where n is 1 (InGaZnO₄), a crystal structure illustrated inFIG. 32A can be obtained, for example. Note that in the crystalstructure in FIG. 32A, since a Ga atom and an In atom each have fiveligands as described in FIG. 15B, a structure in which Ga is replacedwith In can be obtained.

In the case where n is 2 (InGaZn₂O₅), a crystal structure illustrated inFIG. 32B can be obtained, for example. Note that in the crystalstructure in FIG. 32B, since a Ga atom and an In atom each have fiveligands as described in FIG. 15B, a structure in which Ga is replacedwith In can be obtained.

In addition, it is known that examples of the In—Ga—Zn—O that is afour-component metal oxide include InGaZnO₄ having a YbFe₂O₄-typestructure and In₂Ga₂ZnO₇ having a Yb₂Fe₃O₇-type structure, and theIn—Ga—Zn—O can have any of deformed structures of the foregoingstructures (M. Nakamura, N. Kimizuka, and T. Mohri, “The Phase Relationsin the In₂O₃—Ga₂ZnO₄—ZnO System at 1350° C.”, J. Solid State Chem.,1991, Vol. 93, pp. 298-315). Note that a layer containing Yb is denotedby an A layer and a layer containing Fe is denoted by a B layer, below.The YbFe₂O₄-type structure has a repeated structure of ABB|ABB|ABB. Asan example of a deformed structure of the YbFe₂O₄-type structure, arepeated structure of ABBB|ABBB can be given. Further, the Yb₂Fe₃O₇-typestructure has a repeated structure of ABB|AB|ABB|AB. As an example of adeformed structure of the Yb₂Fe₃O₇-type structure, a repeated structureof ABBB|ABB|ABBB|ABB|ABBB|ABB can be given.

In CAAC, metal atoms and oxygen atoms are bonded in an orderly manner incomparison with an amorphous oxide semiconductor. That is to say, in thecase where an oxide semiconductor is amorphous, the coordination numbersof oxygen atoms around a metal atom might vary between various metalatoms, but the coordination numbers of oxygen atoms around a metal atomare almost the same in CAAC. Therefore, microscopic defects of oxygencan be reduced and instability and movement of electric charge that aredue to attachment and detachment of hydrogen atoms (including hydrogenions) or alkali metal atoms can be reduced.

Accordingly, a transistor is formed using an oxide semiconductor filmincluding CAAC, whereby the amount of shift of the threshold voltage ofthe transistor, which occurs after light irradiation or abias-temperature (BT) stress test is performed on the transistor, can bereduced. Thus, a transistor having stable electric characteristics canbe formed.

The conductive films 719 and 720 function as source and drainelectrodes.

For the conductive film for forming the conductive films 719 and 720,any of the following can be used: an element selected from aluminum,chromium, copper, tantalum, titanium, molybdenum, and tungsten; an alloycontaining any of these elements; an alloy film containing the aboveelements in combination; and the like. Alternatively, a structure may beemployed in which a film of a refractory metal such as chromium,tantalum, titanium, molybdenum, or tungsten is provided over or below ametal film of aluminum, copper, or the like. Aluminum or copper ispreferably combined with a refractory metal material so as to preventproblems with heat resistance and corrosion. As the refractory metalmaterial, molybdenum, titanium, chromium, tantalum, tungsten, neodymium,scandium, yttrium, or the like can be used.

Further, the conductive film for forming the conductive films 719 and720 may have a single-layer structure or a layered structure of two ormore layers. For example, a single-layer structure of an aluminum filmcontaining silicon, a two-layer structure in which a titanium film isstacked over an aluminum film, a three-layer structure in which atitanium film, an aluminum film, and a titanium film are stacked in thisorder, and the like can be given. A Cu—Mg—Al alloy, a Mo—Ti alloy, Ti,and Mo have high adhesion to an oxide film. Therefore, when a layeredstructure is employed for the conductive films 719 and 720, in which aconductive film containing a Cu—Mg—Al alloy, a Mo—Ti alloy, Ti, or Mo isused for the lower layer and a conductive film containing Cu is used forthe upper layer, the adhesion between an insulating film which is anoxide film and the conductive films 719 and 720 can be increased.

The conductive film for forming the conductive films 719 and 720 may beformed using a conductive metal oxide. As the conductive metal oxide,indium oxide, tin oxide, zinc oxide, a mixture of indium oxide and tinoxide, a mixture of indium oxide and zinc oxide, or the metal oxidematerial containing silicon or silicon oxide can be used.

In the case where heat treatment is performed after formation of theconductive film, the conductive film preferably has heat resistance highenough to withstand the heat treatment.

Further, an oxide conductive film functioning as a source region and adrain region may be provided between the oxide semiconductor layer 716and the conductive films 719 and 720 functioning as source and drainelectrodes. The material of the oxide conductive film preferablycontains zinc oxide as a component and preferably does not containindium oxide. For such an oxide conductive film, zinc oxide, zincaluminum oxide, zinc aluminum oxynitride, gallium zinc oxide, or thelike can be used.

When the oxide conductive film functioning as a source region and adrain region is provided, resistance between the oxide semiconductorlayer 716 and the conductive films 719 and 720 can be reduced, so thatthe transistor can operate at high speed. In addition, provision of theoxide conductive film functioning as a source region and a drain regionleads to an increase in the breakdown voltage of the transistor.

The gate insulating film 721 can be formed using a material and alayered structure which are similar to those of the gate insulating film703. Note that the gate insulating film 721 preferably contains as fewimpurities such as moisture and hydrogen as possible, and may be formedusing a single-layer insulating film or a plurality of insulating filmsstacked. When hydrogen is contained in the gate insulating film 721,entry of the hydrogen into the oxide semiconductor layer 716 orextraction of oxygen from the oxide semiconductor layer 716 by thehydrogen occurs, whereby the oxide semiconductor layer 716 has lowresistance (n-type conductivity); thus, a parasitic channel might beformed. Therefore, it is important that a film formation method in whichhydrogen is not used is employed in order to form the gate insulatingfilm 721 containing as little hydrogen as possible. A material having ahigh barrier property is preferably used for the gate insulating film721. For example, as the insulating film having a high barrier property,a silicon nitride film, a silicon nitride oxide film, an aluminumnitride film, an aluminum nitride oxide film, or the like can be used.When a plurality of insulating films stacked is used, an insulating filmhaving low proportion of nitrogen, such as a silicon oxide film or asilicon oxynitride film, is formed so that the oxide semiconductor layer716 is closer to the insulating film having low proportion of nitrogenthan to the insulating film having a high barrier property. Then, theinsulating film having a high barrier property is formed so as tooverlap with the conductive films 719 and 720 and the oxidesemiconductor layer 716 with the insulating film having a low proportionof nitrogen sandwiched therebetween. By using the insulating film havinga high barrier property, the impurities such as moisture and hydrogencan be prevented from entering the oxide semiconductor layer 716, thegate insulating film 721, or the interface between the oxidesemiconductor layer 716 and another insulating film and the vicinitythereof. In addition, the insulating film having a low proportion ofnitrogen, such as a silicon oxide film or a silicon oxynitride film,which is formed in contact with the oxide semiconductor layer 716 canprevent the insulating film formed using a material having a highbarrier property from being in direct contact with the oxidesemiconductor layer 716.

In this embodiment, the gate insulating film 721 having a structure inwhich a silicon nitride film having a thickness of 100 nm formed by asputtering method is stacked over a silicon oxide film having athickness of 200 nm formed by a sputtering method is formed. The rangeof the substrate temperature in deposition may be higher than or equalto room temperature and lower than or equal to 300° C. and in thisembodiment, the substrate temperature in deposition is 100° C.

The gate electrode 722 can be formed in such a manner that a conductivefilm is formed over the gate insulating film 721 and then is patterned.The gate electrode 722 can be formed using a material similar to thoseof the gate electrode 707 and the conductive films 719 and 720.

The thickness of the gate electrode 722 is 10 nm to 400 nm, preferably100 nm to 200 nm In this embodiment, after a conductive film for thegate electrode is formed to have a thickness of 150 nm by a sputteringmethod using a tungsten target, the conductive film is processed(patterned) into a desired shape by etching, whereby the gate electrode722 is formed. Note that a resist mask may be formed by an inkjetmethod. Formation of the resist mask by an inkjet method needs nophotomask; thus, manufacturing cost can be reduced.

Although the first transistor 101 is described as a single-gatetransistor, a multi-gate transistor including a plurality of channelformation regions when a plurality of gate electrodes which iselectrically connected is included can be formed if needed.

Note that an insulating film in contact with the oxide semiconductorlayer 716 (corresponding to the gate insulating film 721 in thisembodiment) may be formed using an insulating material containing aGroup 13 element and oxygen. Many of oxide semiconductor materialscontain Group 13 elements, and an insulating material containing a Group13 element works well with oxide semiconductors. By using such aninsulating material containing a Group 13 element for the insulatingfilm in contact with the oxide semiconductor layer, an interface withthe oxide semiconductor layer can be kept favorable.

An insulating material containing a Group 13 element refers to aninsulating material containing one or more Group 13 elements. As theinsulating material containing a Group 13 element, for example, galliumoxide, aluminum oxide, aluminum gallium oxide, gallium aluminum oxide,and the like are given. Here, aluminum gallium oxide refers to amaterial in which the amount of aluminum is larger than that of galliumin atomic percent, and gallium aluminum oxide refers to a material inwhich the amount of gallium is larger than or equal to that of aluminumin atomic percent.

For example, in the case of forming an insulating film in contact withan oxide semiconductor layer containing gallium, a material containinggallium oxide may be used for an insulating film, so that favorablecharacteristics can be kept at the interface between the oxidesemiconductor layer and the insulating film. When the oxidesemiconductor layer and the insulating film containing gallium oxide areprovided in contact with each other, accumulation of hydrogen at theinterface between the oxide semiconductor layer and the insulating filmcan be reduced, for example. Note that a similar effect can be obtainedin the case where an element in the same group as a constituent elementof the oxide semiconductor is used in an insulating film. For example,it is effective to form an insulating film with the use of a materialcontaining aluminum oxide. Note that aluminum oxide is impermeable towater; therefore, it is preferable to use a material containing aluminumoxide in terms of preventing entry of water to the oxide semiconductorlayer.

The insulating film in contact with the oxide semiconductor layer 716 ispreferably made to contain oxygen in a proportion higher than that inthe stoichiometric composition, by heat treatment in an oxygenatmosphere or oxygen doping. “Oxygen doping” refers to addition ofoxygen into a bulk. Note that the term “bulk” is used in order toclarify that oxygen is added not only to a surface of a thin film butalso to the inside of the thin film. In addition, “oxygen doping”includes “oxygen plasma doping” in which oxygen which is made to beplasma is added to a bulk. The oxygen doping may be performed using anion implantation method or an ion doping method.

For example, in the case where the insulating film in contact with theoxide semiconductor layer 716 is formed using gallium oxide, thecomposition of gallium oxide can be set to be Ga₂O_(x) (x=3+α, 0<α<1) byheat treatment in an oxygen atmosphere or by oxygen doping.

In the case where the insulating film in contact with the oxidesemiconductor layer 716 is formed using aluminum oxide, the compositionof aluminum oxide can be set to be Al₂O_(x) (x=3+α, 0<α<1) by heattreatment in an oxygen atmosphere or by oxygen doping.

In the case where the insulating film in contact with the oxidesemiconductor layer 716 is formed using gallium aluminum oxide (oraluminum gallium oxide), the composition of gallium aluminum oxide (oraluminum gallium oxide) can be set to be Ga_(x)Al_(2-x)O_(3+α), (0<x<2,0<α<1) by heat treatment in an oxygen atmosphere or by oxygen doping.

By oxygen doping, an insulating film which includes a region where theproportion of oxygen is higher than that in the stoichiometriccomposition can be formed. When the insulating film including such aregion is in contact with the oxide semiconductor layer, oxygen thatexists excessively in the insulating film is supplied to the oxidesemiconductor layer, and oxygen vacancies in the oxide semiconductorlayer or at the interface between the oxide semiconductor layer and theinsulating film are reduced. Thus, the oxide semiconductor layer can bemade to be i-type or substantially i-type.

Note that the insulating film including a region where the proportion ofoxygen is higher than that in the stoichiometric composition may be usedas either the insulating film located on the upper side of the oxidesemiconductor layer 716 or the insulating film located on the lower sideof the oxide semiconductor layer 716 of the insulating films in contactwith the oxide semiconductor layer 716; however, it is preferable toapply such an insulating film to both of the insulating films in contactwith the oxide semiconductor layer 716. The above effect can be enhancedwith a structure where the insulating films each including a regionwhere the proportion of oxygen is higher than that in the stoichiometriccomposition are used as the insulating films which are in contact withthe oxide semiconductor layer 716 and which are placed on the upper sideand the lower side of the oxide semiconductor layer 716, in order thatthe oxide semiconductor layer 716 may be sandwiched between theinsulating films.

The insulating films on the upper side and the lower side of the oxidesemiconductor layer 716 may include the same constituent elements ordifferent constituent elements. For example, the insulating films on theupper side and the lower side may be both formed using gallium oxidewhose composition is Ga₂O_(x) (x=3+α, 0<α<1). Alternatively, one of theinsulating films on the upper side and the lower side may be formedusing gallium oxide whose composition is Ga₂O_(x) (x=3+α, 0<α<1) and theother may be formed using aluminum oxide whose composition is Al₂O_(x)(x=3+α, 0<α<1).

The insulating film in contact with the oxide semiconductor layer 716may be formed by stacking insulating films each including a region wherethe proportion of oxygen is higher than that in the stoichiometriccomposition. For example, the insulating film on the upper side of theoxide semiconductor layer 716 may be formed as follows: gallium oxidewhose composition is Ga₂O_(x) (x=3+α, 0<α<1) is formed and galliumaluminum oxide (or aluminum gallium oxide) whose composition isGa_(x)Al_(2-x)O_(3+α), (0<x<2, 0<α<1) is formed thereover. Note that theinsulating film on the lower side of the oxide semiconductor layer 716may be formed by stacking insulating films each including a region wherethe proportion of oxygen is higher than that in the stoichiometriccomposition. Further, both of the insulating films on the upper side andthe lower side of the oxide semiconductor layer 716 may be formed bystacking insulating films each including a region where the proportionof oxygen is higher than that in the stoichiometric composition.

The nonvolatile memory circuit 120 can be formed using the firsttransistor 101 described above.

FIG. 5C illustrates a structure of the first transistor 101, which isdifferent from that in FIG. 5B.

In the first transistor 101 in FIG. 5C, the conductive films 719 and 720functioning as source and drain electrodes are provided between theoxide semiconductor layer 716 and the insulating films 712 and 713. Thetransistor 101 in FIG. 5C can be obtained in such a manner that theconductive films 719 and 720 are formed after the formation of theinsulating film 713, and then, the oxide semiconductor layer 716 isformed.

According to this embodiment, it is possible to provide a storage devicewhich does not need a complicated manufacturing process and has lowerpower consumption. In particular, it is possible to provide a storagedevice in which power consumption is reduced by stopping the applicationof source voltage even for a short time.

Embodiment 2

In this embodiment, an oxide semiconductor transistor which has astructure different from that in Embodiment 1 will be described.

A transistor 901 illustrated in FIG. 9A includes, over an insulatingfilm 902, an oxide semiconductor layer 903 which functions as an activelayer; a source electrode 904 and a drain electrode 905 which are formedover the oxide semiconductor layer 903; a gate insulating film 906 overthe oxide semiconductor layer 903, the source electrode 904, and thedrain electrode 905; and a gate electrode 907 which is provided over thegate insulating film 906 so as to overlap with the oxide semiconductorlayer 903.

The transistor 901 illustrated in FIG. 9A is a top-gate transistor inwhich the gate electrode 907 is formed over the oxide semiconductorlayer 903 and also is a top-contact transistor in which the sourceelectrode 904 and the drain electrode 905 are formed over the oxidesemiconductor layer 903. In the transistor 901, the source electrode 904and the drain electrode 905 do not overlap with the gate electrode 907.That is, a distance between the source electrode 904 and the gateelectrode 907 and a distance between the drain electrode 905 and thegate electrode 907 are each larger than the thickness of the gateinsulating film 906. Accordingly, parasitic capacitance between thesource electrode 904 and the gate electrode 907 and parasiticcapacitance between the drain electrode 905 and the gate electrode 907can be small, and thus high-speed operation can be achieved in thetransistor 901.

The oxide semiconductor layer 903 includes a pair of high concentrationregions 908 which is obtained by addition of a dopant imparting n-typeconductivity to the oxide semiconductor layer 903 after the gateelectrode 907 is formed. Further, in the oxide semiconductor layer 903,a region which overlaps with the gate electrode 907 with the gateinsulating film 906 provided therebetween is a channel formation region909. In the oxide semiconductor layer 903, the channel formation region909 is provided between the pair of high concentration regions 908. Thedopant for forming the high concentration regions 908 can be added by anion implantation method. A rare gas such as helium, argon, or xenon; anatom belonging to Group 15, such as nitrogen, phosphorus, arsenic, orantimony; or the like can be used as the dopant.

For example, when nitrogen is used as the dopant, it is preferable thatthe high concentration regions 908 have a nitrogen atom concentration inthe range of higher than or equal to 5×10¹⁹/cm³ and lower than or equalto 1×10²²/cm³.

The high concentration regions 908 to which the dopant imparting n-typeconductivity is added has higher conductivity than other regions in theoxide semiconductor layer 903. Thus, the high concentration regions 908are provided in the oxide semiconductor layer 903, whereby theresistance between the source electrode 904 and the drain electrode 905can be reduced.

When an In—Ga—Zn-based oxide semiconductor is used for the oxidesemiconductor layer 903, heat treatment is performed for approximatelyan hour at a temperature in the range of higher than or equal to 300° C.and lower than or equal to 600° C. after the addition of nitrogen, sothat an oxide semiconductor in the high concentration regions 908 has awurtzite crystal structure. When the oxide semiconductor in the highconcentration regions 908 has a wurtzite crystal structure, theconductivity of the high concentration regions 908 can be furtherincreased and the resistance between the source electrode 904 and thedrain electrode 905 can be further reduced. Note that in order toeffectively reduce the resistance between the source electrode 904 andthe drain electrode 905 by forming the oxide semiconductor having awurtzite crystal structure, when nitrogen is used as the dopant, therange of the nitrogen atom concentration in the high concentrationregions 908 is preferably higher than or equal to 1×10²⁰/cm³ and lowerthan or equal to 7 atoms %. However, even when the nitrogen atomconcentration is lower than that in the above range, the oxidesemiconductor having a wurtzite crystal structure can be obtained insome cases.

Further, the oxide semiconductor layer 903 may include CAAC. When theoxide semiconductor layer 903 includes CAAC, the conductivity of theoxide semiconductor layer 903 can be higher than that of an amorphoussemiconductor film; therefore, the resistance between the sourceelectrode 904 and the drain electrode 905 can be reduced.

The reduction in the resistance between the source electrode 904 and thedrain electrode 905 ensures a high on-state current and high-speedoperation even when the transistor 901 is miniaturized. Further, theminiaturization of the transistor 901 makes it possible to reduce anarea occupied by a storage element including the transistor and increasememory capacity per unit area of the storage element.

A transistor 911 illustrated in FIG. 9B includes a source electrode 914and a drain electrode 915 which are formed over an insulating film 912;an oxide semiconductor layer 913 which is formed over the sourceelectrode 914 and the drain electrode 915 and functions as an activelayer; a gate insulating film 916 over the oxide semiconductor layer913, the source electrode 914, and the drain electrode 915; and a gateelectrode 917 which is provided over the gate insulating film 916 so asto overlap with the oxide semiconductor layer 913.

The transistor 911 illustrated in FIG. 9B is a top-gate transistor inwhich the gate electrode 917 is formed over the oxide semiconductorlayer 913, and also is a bottom-contact transistor in which the sourceelectrode 914 and the drain electrode 915 are formed below the oxidesemiconductor layer 913. As in the transistor 901, the source electrode914 and the drain electrode 915 do not overlap with the gate electrode917 in the transistor 911. Thus, parasitic capacitance between thesource electrode 914 and the gate electrode 917 and parasiticcapacitance between the drain electrode 915 and the gate electrode 917can be reduced and high-speed operation can be achieved.

In addition, the oxide semiconductor layer 913 includes a pair of highconcentration regions 918 which is obtained by addition of a dopantimparting n-type conductivity to the oxide semiconductor layer 913 afterthe gate electrode 917 is formed. Further, in the oxide semiconductorlayer 913, a region which overlaps with the gate electrode 917 with thegate insulating film 916 provided therebetween is a channel formationregion 919. The channel formation region 919 is provided between thepair of high concentration regions 918 in the oxide semiconductor layer913.

The high concentration regions 918 can be formed by an ion implantationmethod in a manner similar to that in the case of the high concentrationregions 908 included in the transistor 901. The case of the highconcentration regions 908 can be referred to for a kind of the dopantfor forming the high concentration regions 918.

For example, when nitrogen is used as the dopant, it is preferable thatthe high concentration regions 918 have a nitrogen atom concentration inthe range of higher than or equal to 5×10¹⁹/cm³ and lower than or equalto 1×10²²/cm³.

The high concentration regions 918 to which the dopant imparting n-typeconductivity is added has higher conductivity than other regions in theoxide semiconductor layer 913. Thus, the high concentration regions 918are provided in the oxide semiconductor layer 913, whereby theresistance between the source electrode 914 and the drain electrode 915can be reduced.

When an In—Ga—Zn-based oxide semiconductor is used for the oxidesemiconductor layer 913, heat treatment is performed for approximatelyan hour at a temperature in the range of higher than or equal to 300° C.and lower than or equal to 600° C. after addition of nitrogen, so thatan oxide semiconductor in the high concentration regions 918 has awurtzite crystal structure. When the oxide semiconductor in the highconcentration regions 918 has a wurtzite crystal structure, theconductivity of the high concentration regions 918 can be furtherincreased and the resistance between the source electrode 914 and thedrain electrode 915 can be further reduced. Note that in order toeffectively reduce the resistance between the source electrode 914 andthe drain electrode 915 by forming the oxide semiconductor having awurtzite crystal structure, when nitrogen is used as the dopant, therange of the nitrogen atom concentration in the high concentrationregions 918 is preferably higher than or equal to 1×10²⁰/cm³ and lowerthan or equal to 7 atoms %. However, even when the nitrogen atomconcentration is lower than that in the above range, the oxidesemiconductor having a wurtzite crystal structure can be obtained insome cases.

Further, the oxide semiconductor layer 913 may include CAAC. When theoxide semiconductor layer 913 includes CAAC, the conductivity of theoxide semiconductor layer 913 can be higher than that of an amorphoussemiconductor film; therefore, the resistance between the sourceelectrode 914 and the drain electrode 915 can be reduced.

The reduction in the resistance between the source electrode 914 and thedrain electrode 915 ensures a high on-state current and high-speedoperation even when the transistor 911 is miniaturized. Further, theminiaturization of the transistor 911 makes it possible to reduce anarea occupied by a storage element including the transistor and increasememory capacity per unit area of the storage element.

A transistor 921 illustrated in FIG. 9C includes an oxide semiconductorlayer 923 which is formed over an insulating film 922 and functions asan active layer; a source electrode 924 and a drain electrode 925 whichare formed over the oxide semiconductor layer 923; a gate insulatingfilm 926 over the oxide semiconductor layer 923, the source electrode924, and the drain electrode 925; and a gate electrode 927 which isprovided over the gate insulating film 926 so as to overlap with theoxide semiconductor layer 923. The transistor 921 further includessidewalls 930 provided on the sides of the gate electrode 927 and formedusing an insulating film.

The transistor 921 illustrated in FIG. 9C is a top-gate transistor inwhich the gate electrode 927 is formed over the oxide semiconductorlayer 923, and also is a top-contact transistor in which the sourceelectrode 924 and the drain electrode 925 are formed over the oxidesemiconductor layer 923. In the transistor 921, the source electrode 924and the drain electrode 925 do not overlap with the gate electrode 927as in the transistor 901; thus, parasitic capacitances between thesource electrode 924 and the gate electrode 927 and between the drainelectrode 925 and the gate electrode 927 can be reduced, leading tohigh-speed operation.

Further, the oxide semiconductor layer 923 includes a pair of highconcentration regions 928 and a pair of low concentration regions 929which can be obtained by addition of a dopant imparting n-typeconductivity to the oxide semiconductor layer 923 after the gateelectrode 927 is formed. Furthermore, in the oxide semiconductor layer923, a region which overlaps with the gate electrode 927 with the gateinsulating film 926 provided therebetween is a channel formation region931. In the oxide semiconductor layer 923, the pair of low concentrationregions 929 is provided between the pair of high concentration regions928, and the channel formation region 931 is provided between the pairof low concentration regions 929. The pair of low concentration regions929 is provided in regions which are included in the oxide semiconductorlayer 923 and overlap with the sidewalls 930 with the gate insulatingfilm 926 provided therebetween.

The high concentration regions 928 and the low concentration regions 929can be formed by an ion implantation method as in the case of the highconcentration regions 908 included in the transistor 901. The case ofthe high concentration regions 908 can be referred to for a kind of thedopant for forming the high concentration regions 928.

For example, when nitrogen is used as the dopant, it is preferable thatthe high concentration regions 928 have a nitrogen atom concentration inthe range of higher than or equal to 5×10¹⁹/cm³ and lower than or equalto 1×10²²/cm³. Further, when nitrogen is used as the dopant, forexample, it is preferable that the low concentration regions 929 have anitrogen atom concentration in the range of higher than or equal to5×10¹⁸/cm³ and lower than 5×10¹⁹ cm³.

The high concentration regions 928 to which the dopant imparting n-typeconductivity is added have higher conductivity than other regions in theoxide semiconductor layer 923. Thus, the high concentration regions 928are provided in the oxide semiconductor layer 923, whereby resistancebetween the source electrode 924 and the drain electrode 925 can bereduced. Further, the low concentration regions 929 are provided betweenthe channel formation region 931 and the high concentration regions 928,which results in a reduction in negative shift of a threshold voltagedue to a short-channel effect.

When an In—Ga—Zn-based oxide semiconductor is used for the oxidesemiconductor layer 923, heat treatment is performed for an hour at atemperature in the range of 300° C. to 600° C. after addition ofnitrogen, so that an oxide semiconductor in the high concentrationregions 928 has a wurtzite crystal structure. Further, the lowconcentration regions 929 may have a wurtzite crystal structure due tothe heat treatment, depending on the concentration of the nitrogen. Whenthe oxide semiconductor in the high concentration regions 928 has awurtzite crystal structure, the conductivity of the high concentrationregions 928 can be further increased and the resistance between thesource electrode 924 and the drain electrode 925 can be further reduced.Note that in order to effectively reduce the resistance between thesource electrode 924 and the drain electrode 925 by forming the oxidesemiconductor having a wurtzite crystal structure, when nitrogen is usedas a dopant, the range of the nitrogen atom concentration in the highconcentration regions 928 is preferably higher than or equal to1×10²⁰/cm³ and lower than or equal to 7 atoms %. However, even when thenitrogen atom concentration is lower than the above range, the oxidesemiconductor having a wurtzite crystal structure can be obtained insome cases.

Further, the oxide semiconductor layer 923 may include CAAC. When theoxide semiconductor layer 923 includes CAAC, the conductivity of theoxide semiconductor layer 923 can be higher than that of an amorphoussemiconductor film; therefore, the resistance between the sourceelectrode 924 and the drain electrode 925 can be reduced.

The reduction in the resistance between the source electrode 924 and thedrain electrode 925 ensures a high on-state current and high-speedoperation even when the transistor 921 is miniaturized. Further, theminiaturization of the transistor 921 makes it possible to reduce anarea occupied by a memory cell including the transistor and increasememory capacity per unit area of a cell array.

A transistor 941 illustrated in FIG. 9D includes a source electrode 944and a drain electrode 945 which are formed over an insulating film 942;an oxide semiconductor layer 943 which is formed over the sourceelectrode 944 and the drain electrode 945 and functions as an activelayer; a gate insulating film 946 over the oxide semiconductor layer943, the source electrode 944, and the drain electrode 945; and a gateelectrode 947 over the gate insulating film 946 so as to overlap withthe oxide semiconductor layer 943. The transistor 941 further includessidewalls 950 provided on the sides of the gate electrode 947 and formedusing an insulating film.

The transistor 941 illustrated in FIG. 9D is a top-gate transistor inwhich the gate electrode 947 is formed over the oxide semiconductorlayer 943, and is also a bottom-contact transistor in which the sourceelectrode 944 and the drain electrode 945 are formed below the oxidesemiconductor layer 943. In the transistor 941, the source electrode 944and the drain electrode 945 do not overlap with the gate electrode 947as in the transistor 901; thus, parasitic capacitances between thesource electrode 944 and the gate electrode 947 and between the drainelectrode 945 and the gate electrode 947 can be reduced, leading tohigh-speed operation.

Further, the oxide semiconductor layer 943 includes a pair of highconcentration regions 948 and a pair of low concentration regions 949which can be obtained by addition of a dopant imparting n-typeconductivity to the oxide semiconductor layer 943 after the gateelectrode 947 is formed. Furthermore, in the oxide semiconductor layer943, a region which overlaps with the gate electrode 947 with the gateinsulating film 946 provided therebetween is a channel formation region951. In the oxide semiconductor layer 943, the pair of low concentrationregions 949 is provided between the pair of high concentration regions948, and the channel formation region 951 is provided between the pairof low concentration regions 949. The pair of low concentration regions949 is provided in a region which is included in the oxide semiconductorlayer 943 and overlaps with the sidewalls 950 with the gate insulatingfilm 946 provided therebetween.

The high concentration regions 948 and the low concentration regions 949can be formed by an ion implantation method as in the case of the highconcentration regions 908 included in the transistor 901. The case ofthe high concentration regions 908 can be referred to for a kind of thedopant for forming the high concentration regions 948.

For example, when nitrogen is used as the dopant, it is preferable thatthe high concentration regions 948 have a nitrogen atom concentration inthe range of higher than or equal to 5×10¹⁹/cm³ and lower than or equalto 1×10²²/cm³. Further, when nitrogen is used as the dopant, forexample, it is preferable that the low concentration regions 949 have anitrogen atom concentration in the range of higher than or equal to5×10¹⁸/cm³ and lower than 5×10¹⁹ cm³.

The high concentration regions 948 to which the dopant imparting n-typeconductivity is added has higher conductivity than other regions in theoxide semiconductor layer 943. Thus, the high concentration regions 948are included in the oxide semiconductor layer 943, whereby resistancebetween the source electrode 944 and the drain electrode 945 can bereduced. Further, the low concentration regions 949 are provided betweenthe channel formation region 951 and the high concentration regions 948,which result in a reduction in negative shift of a threshold voltage dueto a short-channel effect.

When an In—Ga—Zn-based oxide semiconductor is used for the oxidesemiconductor layer 943, heat treatment for an hour at a temperature inthe range of 300° C. to 600° C. after addition of nitrogen enables anoxide semiconductor in the high concentration regions 948 to have awurtzite crystal structure. Further, the low concentration regions 949may have a wurtzite crystal structure due to the heat treatment,depending on the concentration of the nitrogen. When the oxidesemiconductor in the high concentration regions 948 has a wurtzitecrystal structure, the conductivity of the high concentration regions948 can be further increased and the resistance between the sourceelectrode 944 and the drain electrode 945 can be further reduced. Notethat in order to effectively reduce the resistance between the sourceelectrode 944 and the drain electrode 945 by forming the oxidesemiconductor having a wurtzite crystal structure, when nitrogen is usedas a dopant, the range of the nitrogen atom concentration in the highconcentration regions 948 is preferably higher than or equal to1×10²⁰/cm³ and lower than or equal to 7 atoms %. However, even when thenitrogen atom concentration is lower than the above range, the oxidesemiconductor having a wurtzite crystal structure can be obtained insome cases.

Further, the oxide semiconductor layer 943 may include CAAC. When theoxide semiconductor layer 943 includes CAAC, the conductivity of theoxide semiconductor layer 943 can be higher than that of an amorphoussemiconductor film; therefore, the resistance between the sourceelectrode 944 and the drain electrode 945 can be reduced.

The reduction in the resistance between the source electrode 944 and thedrain electrode 945 ensures a high on-state current and high-speedoperation even when the transistor 941 is miniaturized. Further, theminiaturization of the transistor 941 makes it possible to reduce anarea occupied by a memory cell including the transistor and increasememory capacity per unit area of a cell array.

Note that, as one of methods for manufacturing high concentrationregions functioning as a source region and a drain region in atransistor including an oxide semiconductor through a self-alignedprocess, a method is disclosed in which a surface of an oxidesemiconductor layer is exposed and argon plasma treatment is performedto reduce the resistance of the region in the oxide semiconductor layerwhich is exposed to plasma (S. Jeon et al. “180 nm Gate Length AmorphousInGaZnO Thin Film Transistor for High Density Image SensorApplications”, IEDM Tech. Dig., pp. 504-507, 2010).

However, in the manufacturing method, a gate insulating film needs to bepartly removed after formation of the gate insulating film so thatportions which are to serve as the source region and the drain regionare exposed. At the time of partly removing the gate insulating film,part of an oxide semiconductor layer below the gate insulating film isover-etched, so that the thicknesses of the portions which are to serveas the source region and the drain region are reduced. As a result, theresistance of the source region and the drain region is increased, and acharacteristic defect of the transistor due to the over-etching islikely to occur.

To miniaturize a transistor, it is necessary to employ a dry etchingmethod with high process precision. However, the above over-etching ismore likely to occur when a dry etching method is employed in which theetching rate of the oxide semiconductor layer is not sufficientlydifferent from the etching rate of the gate insulating film.

For example, no problem is caused when the oxide semiconductor layer hasa sufficient thickness, but in the case where the channel length is 200nm or less, it is necessary that the thickness of a portion of the oxidesemiconductor layer, which is to serve as a channel formation region, be20 nm or less, preferably 10 nm or less, in order that a short-channeleffect may be prevented. When such a thin oxide semiconductor layer isused, the over-etching of the oxide semiconductor layer is notpreferable because the resistance of the source region and the drainregion is increased and a characteristic defect of the transistor iscaused due to the over-etching as described above.

However, when a dopant is added to the oxide semiconductor layer in thestate where the oxide semiconductor layer is not exposed and the gateinsulating film remains, as described in one embodiment of the disclosedinvention, the over-etching of the oxide semiconductor layer can beprevented and excessive damage to the oxide semiconductor layer can bereduced. In addition, an interface between the oxide semiconductor layerand the gate insulating film is kept clean. Consequently,characteristics and reliability of the transistor can be improved.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 3

One mode of a structure of a storage device will be described in thisembodiment.

FIG. 10 and FIG. 11 are cross-sectional views of storage devices. Eachof the storage devices illustrated in FIG. 10 and FIG. 11 includes aplurality of storage elements formed in multiple layers in an upperportion and a logic circuit 3004 in a lower portion. As examples of theplurality of storage elements, a storage element 3170 a and a storageelement 3170 b are illustrated. For the storage element 3170 a and thestorage element 3170 b, a configuration similar to that of the memorycircuit 120 described in the above embodiment may be employed, forexample.

Note that a transistor 3171 a in the storage element 3170 a isillustrated as a representative. A transistor 3171 b in the storageelement 3170 b is illustrated as a representative. In each of thetransistor 3171 a and the transistor 3171 b, a channel formation regionis formed in an oxide semiconductor layer. One of or both the transistor3171 a and the transistor 3171 b are used as the first transistor 101described above.

Note that the transistor 3171 a and the transistor 3171 b in FIG. 10 andFIG. 11 each have a structure similar to that of the transistor 901 inFIG. 9A; however, one embodiment of the disclosed invention is notlimited thereto. The structures of the transistor 3171 a and thetransistor 3171 b in FIG. 10 and FIG. 11 may each be similar to any ofthe structures of the first transistor 101 in FIG. 5B, the firsttransistor 101 in FIG. 5C, the transistor 911 in FIG. 9B, the transistor921 in FIG. 9C, and the transistor 941 in FIG. 9D. The structure of thetransistor in which a channel formation region is formed in an oxidesemiconductor layer is similar to the structure described in any of theabove embodiments; thus, description thereof will be omitted.

An electrode 3501 a which is formed in the same layer as source anddrain electrodes of the transistor 3171 a is electrically connected toan electrode 3003 a through an electrode 3502 a. An electrode 3501 cwhich is formed in the same layer as source and drain electrodes of thetransistor 3171 b is electrically connected to an electrode 3003 cthrough an electrode 3502 c.

The logic circuit 3004 includes a transistor 3001 in which asemiconductor material other than an oxide semiconductor is used for achannel formation region. The transistor 3001 can be a transistorobtained in such a manner that an element separation insulating film3106 is provided over a substrate 3000 including a semiconductormaterial (e.g., silicon) and a region serving as the channel formationregion is formed in a region surrounded by the element separationinsulating film 3106. Note that the transistor 3001 may be a transistorobtained in such a manner that the channel formation region is formed ina semiconductor film such as a silicon film formed on an insulatingsurface or in a silicon film of an SOI substrate. Description of thetransistor 3001 is omitted because a known structure can be used.

A wiring 3100 a and a wiring 3100 b are formed between layers in whichthe transistor 3171 a is formed and layers in which the transistor 3001is formed. An insulating film 3140 a is provided between the wiring 3100a and the layers in which the transistor 3001 is formed. An insulatingfilm 3141 a is provided between the wiring 3100 a and the wiring 3100 b.An insulating film 3142 a is provided between the wiring 3100 b and thelayers in which the transistor 3171 a is formed.

Similarly, a wiring 3100 c and a wiring 3100 d are formed between layersin which the transistor 3171 b is formed and the layers in which thetransistor 3171 a is formed. An insulating film 3140 b is providedbetween the wiring 3100 c and the layers in which the transistor 3171 ais formed. An insulating film 3141 b is provided between the wiring 3100c and the wiring 3100 d. An insulating film 3142 b is provided betweenthe wiring 3100 d and the layers in which the transistor 3171 b isformed.

The insulating films 3140 a, 3141 a, 3142 a, 3140 b, 3141 b, and 3142 beach function as an interlayer insulating film whose surface can beplanarized.

Through the wiring 3100 a, the wiring 3100 b, the wiring 3100 c, and thewiring 3100 d, electrical connection between the storage elements,electrical connection between the logic circuit 3004 and the storageelement, and the like can be established.

An electrode 3303 included in the logic circuit 3004 can be electricallyconnected to a circuit provided in the upper portion.

For example, as illustrated in FIG. 10, the electrode 3303 can beelectrically connected to the wiring 3100 a through an electrode 3505.The wiring 3100 a can be electrically connected to an electrode 3501 bthrough an electrode 3503 a. In this manner, the wiring 3100 a and theelectrode 3303 can be electrically connected to the source or the drainof the transistor 3171 a. In addition, the electrode 3501 b can beelectrically connected to an electrode 3003 b through an electrode 3502b. The electrode 3003 b can be electrically connected to the wiring 3100c through an electrode 3503 b.

FIG. 10 illustrates an example in which the electrode 3303 and thetransistor 3171 a are electrically connected to each other through thewiring 3100 a; however, one embodiment of the disclosed invention is notlimited thereto. The electrode 3303 may be electrically connected to thetransistor 3171 a through either the wiring 3100 b or the wiring 3100 aand the wiring 3100 b. Further, as illustrated in FIG. 11, the electrode3303 and the transistor 3171 a may be electrically connected to eachother through neither the wiring 3100 a nor the wiring 3100 b. In FIG.11, the electrode 3303 is electrically connected to the electrode 3003 bthrough an electrode 3503. The electrode 3003 b is electricallyconnected to the source or the drain of the transistor 3171 a. In thismanner, the electrode 3303 can be electrically connected to thetransistor 3171 a.

Note that FIG. 10 and FIG. 11 each illustrate an example in which thetwo storage elements (the storage element 3170 a and the storage element3170 b) are stacked; however, the number of stacked storage elements isnot limited to two.

FIG. 10 and FIG. 11 each illustrate an example where two wiring layers,i.e., a wiring layer in which the wiring 3100 a is formed and a wiringlayer in which the wiring 3100 b is formed are provided between thelayers in which the transistor 3171 a is formed and the layers in whichthe transistor 3001 is formed; however, the number of wiring layersprovided therebetween is not limited to two. One wiring layer or threeor more wiring layers may be provided between the layers in which thetransistor 3171 a is formed and the layers in which the transistor 3001is formed.

FIG. 10 and FIG. 11 each illustrate an example where two wiring layers,i.e., a wiring layer in which the wiring 3100 c is formed and a wiringlayer in which the wiring 3100 d is formed are provided between thelayers in which the transistor 3171 b is formed and the layers in whichthe transistor 3171 a is formed; however, the number of wiring layersprovided therebetween is not limited to two. One wiring layer or threeor more wiring layers may be provided between the layers in which thetransistor 3171 b is formed and the layers in which the transistor 3171a is formed.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 4

In this embodiment, a structure of a storage device including aplurality of the storage devices 130 or the storage devices 100 which isdescribed in Embodiment 1 will be described.

FIG. 12A illustrates an example of a structure of a storage deviceaccording to this embodiment. A storage device 400 illustrated in FIG.12A includes a switching element 401 and a storage element group 403including a plurality of storage elements 402. Specifically, as each ofthe storage elements 402, the storage device 100 or 130 whose structureis described in Embodiment 1 can be used. The source voltage Vx which isa high power supply potential is applied to each of the storage elements402 included in the storage element group 403 through the switchingelement 401. Further, the potential of the data signal D and a low powersupply potential (e.g., the ground potential GND) are supplied to eachof the storage elements 402 included in the storage element group 403.

In FIG. 12A, a transistor is used for the switching element 401, and theswitching of the transistor is controlled with a control signal Sig Ainput to a gate electrode thereof.

Note that FIG. 12A illustrates a structure in which the switchingelement 401 includes only one transistor; however, the disclosedinvention is not limited to this structure. In one embodiment of thedisclosed invention, the switching element 401 may include a pluralityof transistors. In the case where the switching element 401 includes aplurality of transistors which serve as switching elements, theplurality of transistors may be electrically connected to each other inparallel, in series, or in combination of parallel connection and serialconnection.

Although the switching element 401 controls the application of thesource voltage Vx which is a high power supply potential to each of thestorage elements 402 included in the storage element group 403 in FIG.12A, the switching element 401 may control the supply of a low powersupply potential (e.g., the ground potential GND). FIG. 12B illustratesa storage device 410 in which a low power supply potential (e.g., theground potential GND) is supplied to each of the storage elements 402included in the storage element group 403 through the switching element401. In the storage device 410 in FIG. 12B, the switching element 401can control the supply of a low power supply potential (e.g., the groundpotential GND) to each of the storage elements 402 included in thestorage element group 403.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 5

In this embodiment, a structure of a signal processing circuit includingthe storage device described in the above embodiment will be described.

FIG. 13 illustrates an example of a signal processing circuit accordingto this embodiment. The signal processing circuit includes, at least,one or a plurality of arithmetic circuits and one or a plurality ofstorage devices. Specifically, a signal processing circuit 150illustrated in FIG. 13 includes an arithmetic circuit 151, an arithmeticcircuit 152, a storage device 153, a storage device 154, a storagedevice 155, a control device 156, and a power supply control circuit157.

The arithmetic circuits 151 and 152 each include, as well as a logiccircuit which carries out simple logic arithmetic processing, an adder,a multiplier, various arithmetic circuits, and the like. The storagedevice 153 functions as a register for temporarily holding data when thearithmetic processing is carried out in the arithmetic circuit 151. Thestorage device 154 functions as a register for temporarily holding datawhen the arithmetic processing is carried out in the arithmetic circuit152.

In addition, the storage device 155 can be used as a main memory and canstore a program executed by the control device 156 as data or can storedata from the arithmetic circuit 151 and the arithmetic circuit 152.

The control device 156 is a circuit which performs centralized controlof operations of the arithmetic circuit 151, the arithmetic circuit 152,the storage device 153, the storage device 154, and the storage device155 which are included in the signal processing circuit 150. Note thatalthough FIG. 13 illustrates a configuration in which the control device156 is provided in the signal processing circuit 150 as a part thereof,the control device 156 may be provided outside the signal processingcircuit 150.

When the storage device 130 or 100 described in Embodiment 1 or thestorage device 400 or 410 described in Embodiment 4 is used for thestorage device 153, the storage device 154, and the storage device 155,data can be held even when the application of source voltage to thestorage device 153, the storage device 154, and the storage device 155is stopped. In the above manner, the application of the source voltageto the entire signal processing circuit 150 can be stopped, wherebypower consumption can be suppressed. Alternatively, the application ofthe source voltage to one or more of the storage device 153, the storagedevice 154, and the storage device 155 can be stopped, whereby powerconsumed by the signal processing circuit 150 can be reduced. Inaddition, after the application of the source voltage is resumed, thesignal processing circuit 150 can return to the state which is the sameas that before the supply of the source voltage is stopped, in a shorttime.

In addition, as well as the application of the source voltage to thestorage device, the application of the source voltage to the controlcircuit or the arithmetic circuit which transmits/receives data to/fromthe storage device may be stopped. For example, when the arithmeticcircuit 151 and the storage device 153 are not operated, the applicationof the source voltage to the arithmetic circuit 151 and the storagedevice 153 may be stopped.

In addition, the power supply control circuit 157 controls the level ofthe source voltage which is supplied to the arithmetic circuit 151, thearithmetic circuit 152, the storage device 153, the storage device 154,the storage device 155, and the control device 156 included in thesignal processing circuit 150. Further, in the case where theapplication of the source voltage is stopped, a switching element forstopping the application of the source voltage may be provided for thepower supply control circuit 157, or for each of the arithmetic circuit151, the arithmetic circuit 152, the storage device 153, the storagedevice 154, the storage device 155, and the control device 156. In thelatter case, the power supply control circuit 157 is not necessarilyprovided in the signal processing circuit according to this embodiment.

Note that a storage device which functions as a cache memory may beprovided between the storage device 155 that is a main memory and eachof the arithmetic circuit 151, the arithmetic circuit 152, and thecontrol device 156. Provision of the cache memory allows reduction oflow-speed accesses to the main memory, so that the speed of the signalprocessing such as arithmetic processing can be increased. The use ofthe above storage element also for the storage device functioning as acache memory leads to reduction in power consumption of the signalprocessing circuit 150. In addition, after the application of the sourcevoltage is resumed, the signal processing circuit 150 can return to thestate which is the same as that before the source voltage is stopped, ina short time.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 6

In this embodiment, description will be given of a configuration of acentral processing unit (CPU) which is one of signal processing circuitsaccording to one embodiment of the disclosed invention.

FIG. 14 illustrates the configuration of the CPU according to thisembodiment. The CPU illustrated in FIG. 14 mainly includes, over asubstrate 9900, an arithmetic logic unit (ALU) 9901, an ALU controller9902, an instruction decoder 9903, an interrupt controller 9904, atiming controller 9905, a register 9906, a register controller 9907, abus interface (Bus I/F) 9908, a rewritable ROM 9909, and a ROM interface(ROM I/F) 9920. The ROM 9909 and the ROM I/F 9920 may be provided overanother chip. It is needless to say that the CPU in FIG. 14 is only anexample in which the configuration is simplified, and actual CPUs havevarious configurations depending on the application.

An instruction input to the CPU through the Bus I/F 9908 is input to theinstruction decoder 9903 and decoded therein, and then, input to the ALUcontroller 9902, the interrupt controller 9904, the register controller9907, and the timing controller 9905.

The ALU controller 9902, the interrupt controller 9904, the registercontroller 9907, and the timing controller 9905 perform various controlsbased on the decoded instruction. Specifically, the ALU controller 9902generates signals for controlling the drive of the ALU 9901. While theCPU is executing a program, the interrupt controller 9904 processes aninterrupt request from an external input/output device or a peripheralcircuit depending on its priority or a mask state. The registercontroller 9907 generates an address of the register 9906, andreads/writes data from/to the register 9906 depending on the state ofthe CPU.

The timing controller 9905 generates signals for controlling operationtimings of the ALU 9901, the ALU controller 9902, the instructiondecoder 9903, the interrupt controller 9904, and the register controller9907. For example, the timing controller 9905 is provided with aninternal clock generator for generating an internal clock signal CLK2 onthe basis of a reference clock signal CLK1, and inputs the clock signalCLK2 to the above circuits.

In the CPU of this embodiment, a storage device having the structuredescribed in any of the above embodiments is provided in the register9906. The register controller 9907 determines, in response to aninstruction from the ALU 9901, which of the storage circuit 120 and thestorage circuit 121 holds data in the storage device in the register9906. When data retention by a feedback loop of a phase inversionelement is selected, source voltage is supplied to the storage device inthe register 9906. When data retention in a storage capacitor isselected, the application of source voltage to the storage device in theregister 9906 can be stopped. When a switching element is providedbetween a storage element group and a node to which a high power supplypotential or a low power supply potential is supplied, as illustrated inFIG. 12A or FIG. 12B, it is possible to stop the supply of power.

In such a manner, even in the case where the operation of the CPU istemporarily stopped and the application of the source voltage isstopped, data can be held and power consumption can be reduced.Specifically, for example, while a user of a personal computer does notinput data to an input device such as a keyboard, the operation of a CPUcan be stopped, so that the power consumption can be reduced.

Although the CPU is described as an example in this embodiment, thesignal processing circuit according to one embodiment of the disclosedinvention is not limited to the CPU and can be applied to an LSI such asa microprocessor, an image processing circuit, a digital signalprocessor (DSP), or a field programmable gate array (FPGA).

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 7

With the use of a signal processing circuit according to one embodimentof the disclosed invention, an electronic device with low powerconsumption can be provided. Particularly in the case of a portableelectronic device which has difficulty in continuously receiving power,addition of a signal processing circuit with low power consumptionaccording to one embodiment of the disclosed invention as a component ofthe device makes it possible to obtain an advantage of increasing thecontinuous operation time. Further, with the use of a transistor with alow off-state current, redundant circuit design which is needed tocompensate for a high off-state current is unnecessary; therefore, theintegration degree of the signal processing circuit can be increased,and the signal processing circuit can have higher functionality.

A signal processing circuit according to one embodiment of the disclosedinvention can be used for a display device, a personal computer, or animage reproducing device provided with recording media (typically, adevice which reproduces the content of recording media such as a digitalversatile disc (DVD) and has a display for displaying the reproducedimage). Other examples of electronic devices each of which can beprovided with a signal processing circuit, according to one embodimentof the disclosed invention, include a mobile phones, game machinesincluding portable game machines, portable information terminals, e-bookreaders, video cameras, digital still cameras, goggle-type displays(head mounted displays), navigation systems, audio reproducing devices(e.g., car audio systems and digital audio players), copiers,facsimiles, printers, multifunction printers, automated teller machines(ATMs), vending machines, and the like.

The cases will be described in which a signal processing circuitaccording to one embodiment of the disclosed invention is applied toportable electronic devices such as a mobile phone, a smartphone, and ane-book reader.

FIG. 6 is a block diagram of a portable electronic device. The portableelectronic device illustrated in FIG. 6 includes an RF circuit 421, ananalog baseband circuit 422, a digital baseband circuit 423, a battery424, a power supply circuit 425, an application processor 426, a flashmemory 430, a display controller 431, a memory circuit 432, a display433, a touch sensor 439, an audio circuit 437, a keyboard 438, and thelike. The display 433 includes a display portion 434, a source driver435, and a gate driver 436. The application processor 426 includes a CPU427, a DSP 428, and an interface 429. The use of the signal processingcircuit described in the above embodiment for the CPU 427 allowsreduction in power consumption. Although the memory circuit 432generally includes an SRAM or a DRAM, when the storage device describedin the above embodiment is used for the memory circuit 432, powerconsumption can be reduced.

FIG. 7 is a block diagram illustrating a configuration of the memorycircuit 432. The memory circuit 432 includes a storage device 442, astorage device 443, a switch 444, a switch 445, and a memory controller441.

First, image data is received by the portable electronic device or isformed by the application processor 426. The image data is stored in thestorage device 442 via the switch 444. The image data output via theswitch 444 is sent to the display 433 via the display controller 431.The display 433 displays an image using the image data.

When a display image does not change as in the case of a still image,the image data read out from the storage device 442 continues to be sentto the display controller 431 via the switch 445, generally at a cycleof 30 Hz to 60 Hz. When a user performs switching of an image displayedon the display, the application processor 426 forms new image data andthe image data is stored in the storage device 443 via the switch 444.Even when the new image data is stored in the storage device 443, imagedata is periodically read out from the storage device 442 via the switch445.

When the storage of the new image data in the storage device 443 iscompleted, the new image data stored in the storage device 443 is readout and sent to the display 433 via the switch 445 and the displaycontroller 431. The display 433 displays an image using the sent newimage data.

The reading of the image data is continuously performed until next newimage data is stored in the storage device 442. In this manner, thestorage device 442 and the storage device 443 alternately performwriting and reading of image data, and the display 433 displays animage.

The storage device 442 and the storage device 443 are not necessarilydifferent storage devices, and a memory region included in one storagedevice may be divided to be used. The use of the storage devicedescribed in the above embodiment is used for these storage devicesmakes it possible to reduce power consumption.

FIG. 8 is a block diagram of an e-book reader. The electronic bookreader includes a battery 451, a power supply circuit 452, amicroprocessor 453, a flash memory 454, an audio circuit 455, a keyboard456, a memory circuit 457, a touch panel 458, a display 459, and adisplay controller 460. The use of the signal processing circuitdescribed in the above embodiment for the microprocessor 453 allowsreduction in power consumption. Further, the use of the storage devicedescribed in the above embodiment for the memory circuit 457 allowsreduction in power consumption.

For example, when a user utilizes a function of highlighting forclarification of a difference between a specific portion and otherportions in book data, for example, by changing the color of thespecific portion, underlining, displaying letters with increased linewidths, and changing the style of letters in the specific portion, thedata of the portion specified by the user in the book data needs to bestored. The memory circuit 457 has a function of temporarily storing thedata. Note that when the data is held for a long time, the data may becopied into the flash memory 454.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 8

The actually measured field-effect mobility of an insulated gatetransistor can be lower than its original mobility because of a varietyof reasons; this phenomenon occurs not only in the case of using anoxide semiconductor. One of the reasons that reduce the mobility is adefect inside a semiconductor or a defect at an interface between thesemiconductor and an insulating film. When a Levinson model is used, thefield-effect mobility on the assumption that no defect exists inside thesemiconductor can be calculated theoretically. In this embodiment, thefield-effect mobility of an ideal oxide semiconductor without a defectinside the semiconductor is calculated theoretically, and calculationresults of characteristics of minute transistors each of which ismanufactured using such an oxide semiconductor are shown.

Assuming that the original mobility and the measured field-effectmobility of a semiconductor are μ₀ and μ, respectively, and a potentialbarrier (such as a grain boundary) exists in the semiconductor, thefield-effect mobility μ can be expressed by the following equation.

$\begin{matrix}{\mu = {\mu_{0}{\exp\left( {- \frac{E}{kT}} \right)}}} & \left\lbrack {{EQUATION}\mspace{14mu} 2} \right\rbrack\end{matrix}$

Here, E represents the height of the potential barrier, k represents theBoltzmann constant, and T represents the absolute temperature. When thepotential barrier is assumed to be attributed to a defect, the height ofthe potential barrier can be expressed by the following equationaccording to the Levinson model.

$\begin{matrix}{E = {\frac{e^{2}N^{2}}{8ɛ\mspace{11mu} n} = \frac{e^{3}N^{2}t}{8ɛ\; C_{ox}V_{g}}}} & \left\lbrack {{EQUATION}\mspace{14mu} 3} \right\rbrack\end{matrix}$

Here, e represents the elementary charge, N represents the averagedefect density per unit area in a channel, ∈ represents the permittivityof the semiconductor, n represents the number of carriers per unit areain the channel, C_(ox) represents the capacitance per unit area, V_(g)represents the gate voltage, and t represents the thickness of thechannel. In the case where the thickness of the semiconductor layer isless than or equal to 30 nm, the thickness of the channel may beregarded as being the same as the thickness of the semiconductor layer.The drain current I_(d) in a linear region can be expressed by thefollowing equation.

$\begin{matrix}{I_{d} = {\frac{W_{\mu}V_{g}V_{d}C_{ox}}{L}{\exp\left( {- \frac{E}{kT}} \right)}}} & \left\lbrack {{EQUATION}\mspace{14mu} 4} \right\rbrack\end{matrix}$

Here, L represents the channel length and W represents the channelwidth, and L and W are each 10 μm here. In addition, V_(d) representsthe drain voltage (the voltage between a source and a drain). Whendividing both sides of the above equation by V_(g) and then takinglogarithms of both sides, the following equation can be obtained.

$\begin{matrix}{{\ln \; \left( \frac{I_{d}}{V_{g}} \right)} = {{{\ln\left( \frac{W_{\mu}V_{d}C_{ox}}{L} \right)} - \frac{E}{kT}} = {{\ln\left( \frac{W_{\mu}V_{d}C_{ox}}{L} \right)} - \frac{e^{3}N^{2}t}{8{kT}\mspace{11mu} ɛ\mspace{11mu} C_{ox}V_{g}}}}} & \left\lbrack {{EQUATION}\mspace{14mu} 5} \right\rbrack\end{matrix}$

The right side of Equation 5 is a function of V_(g). From Equation 5, itis found that the defect density N can be obtained from the slope of aline in a graph which is obtained by plotting actual measured valueswith ln(I_(d)/V_(g)) as the ordinate and 1/V_(g) as the abscissa. Thatis, the defect density can be evaluated from the I_(d)-V_(g)characteristics of the transistor. The defect density N of an oxidesemiconductor in which the ratio of indium (In), tin (Sn), and zinc (Zn)is 1:1:1 is approximately 1×10¹²/cm².

On the basis of the defect density obtained in this manner, or the like,μ₀ can be calculated to be 120 cm²/Vs from Equation 2 and Equation 3.The measured mobility of an In—Sn—Zn-based oxide including a defect isapproximately 40 cm²/Vs. However, assuming that no defect exists insidethe semiconductor and at the interface between the semiconductor and aninsulating layer, the mobility μ₀ of the oxide semiconductor is expectedto be 120 cm²/Vs.

Note that even when no defect exists inside a semiconductor, scatteringat the interface between a channel and a gate insulating film affectsthe transport property of the transistor. In other words, the mobilityμ₁ at a position that is distance x away from the interface between thechannel and the gate insulating film can be expressed by the followingequation.

$\begin{matrix}{\frac{1}{\mu_{1}} = {\frac{1}{\mu_{0}} + {\frac{D}{B}{\exp \left( {- \frac{x}{G}} \right)}}}} & \left\lbrack {{EQUATION}\mspace{14mu} 6} \right\rbrack\end{matrix}$

Here, D represents the electric field in the gate direction, and B and Gare constants. B and G can be obtained from actual measurement results;according to the above measurement results, B is 4.75×10⁷ cm/s and G is10 nm (the depth to which the influence of interface scatteringreaches). When D is increased (i.e., when the gate voltage V_(g) isincreased), the second term of Equation 6 is increased and accordinglythe mobility is decreased.

Calculation results of the mobility μ₂ of a transistor in which achannel includes an ideal oxide semiconductor without a defect insidethe semiconductor are shown in FIG. 18. For the calculation, softwareSentaurus Device manufactured by Synopsys, Inc. was used, and thebandgap, the electron affinity, the relative permittivity, and thethickness of the oxide semiconductor were assumed to be 2.8 eV, 4.7 eV,15, and 15 nm, respectively. These values were obtained by measurementof a thin film that was formed by a sputtering method.

Further, the work functions of a gate, a source, and a drain wereassumed to be 5.5 eV, 4.6 eV, and 4.6 eV, respectively. The thickness ofa gate insulating film was assumed to be 100 nm, and the relativepermittivity thereof was assumed to be 4.1. The channel length and thechannel width were each assumed to be 10 μm, and the drain voltage V_(d)was assumed to be 0.1 V.

As shown in FIG. 18, the mobility has a peak of more than 100 cm²/Vs ata gate voltage V_(g) that is a little over 1 V and is decreased as thegate voltage V_(g) becomes higher because the influence of interfacescattering is increased. Note that in order to reduce interfacescattering, it is preferable that a surface of the semiconductor layerbe flat at the atomic level (atomic layer flatness).

Calculation results of characteristics of minute transistors which aremanufactured using an oxide semiconductor having such a mobility areshown in FIGS. 19A to 19C, FIGS. 20A to 20C, and FIGS. 21A to 21C. FIGS.22A and 22B illustrate cross-sectional structures of the transistorsused for the calculation. The transistors illustrated in FIGS. 22A and22B each include a semiconductor region 8103 a and a semiconductorregion 8103 c which have n⁺-type conductivity in an oxide semiconductorlayer. The resistivities of the semiconductor region 8103 a and thesemiconductor region 8103 c are 2×10⁻³ Ωcm.

The transistor illustrated in FIG. 22A is formed over a base insulatingfilm 8101 and an embedded insulator 8102 which is embedded in the baseinsulating film 8101 and formed of aluminum oxide. The transistorincludes the semiconductor region 8103 a, the semiconductor region 8103c, an intrinsic semiconductor region 8103 b serving as a channelformation region therebetween, and a gate electrode 8105. The width ofthe gate electrode 8105 is 33 nm.

A gate insulating film 8104 is formed between the gate electrode 8105and the semiconductor region 8103 b. In addition, a sidewall insulator8106 a and a sidewall insulator 8106 b are formed on both side surfacesof the gate electrode 8105, and an insulator 8107 is formed over thegate electrode 8105 so as to prevent a short circuit between the gateelectrode 8105 and another wiring. The sidewall insulator has a width of5 nm. A source electrode 8108 a and a drain electrode 8108 b areprovided in contact with the semiconductor region 8103 a and thesemiconductor region 8103 c, respectively. Note that the channel widthof this transistor is 40 nm.

The transistor of FIG. 22B is the same as the transistor of FIG. 22A inthat it is formed over the base insulating film 8101 and the embeddedinsulator 8102 formed of aluminum oxide and that it includes thesemiconductor region 8103 a, the semiconductor region 8103 c, theintrinsic semiconductor region 8103 b provided therebetween, the gateelectrode 8105 having a width of 33 nm, the gate insulating film 8104,the sidewall insulator 8106 a, the sidewall insulator 8106 b, theinsulator 8107, the source electrode 8108 a, and the drain electrode8108 b.

The transistor illustrated in FIG. 22A is different from the transistorillustrated in FIG. 22B in the conductivity type of semiconductorregions under the sidewall insulator 8106 a and the sidewall insulator8106 b. In the transistor illustrated in FIG. 22A, the semiconductorregions under the sidewall insulator 8106 a and the sidewall insulator8106 b are part of the semiconductor region 8103 a having n⁺-typeconductivity and part of the semiconductor region 8103 c having n⁺-typeconductivity, whereas in the transistor illustrated in FIG. 22B, thesemiconductor regions under the sidewall insulator 8106 a and thesidewall insulator 8106 b are parts of the intrinsic semiconductorregion 8103 b. In other words, in the semiconductor layer of FIG. 22B, aregion having a width of L_(off) which overlaps with neither thesemiconductor region 8103 a (the semiconductor region 8103 c) nor thegate electrode 8105 is provided. This region is called an offset region,and the width L_(off) is called an offset length. As is seen from FIGS.22A and 22B, the offset length is equal to the width of the sidewallinsulator 8106 a (the sidewall insulator 8106 b).

The other parameters used in calculation are as described above. For thecalculation, software Sentaurus Device manufactured by Synopsys, Inc.was used. FIGS. 19A to 19C show the gate voltage (V_(g): a potentialdifference between the gate and the source) dependence of the draincurrent (I_(d), solid line) and the mobility (μ, dotted line) of thetransistor having the structure illustrated in FIG. 22A. The draincurrent I_(d) is obtained by calculation under the assumption that thedrain voltage (a potential difference between the drain and the source)is +1 V and the mobility μ is obtained by calculation under theassumption that the drain voltage is +0.1 V.

FIG. 19A shows the gate voltage dependence of the transistor in the casewhere the thickness of the gate insulating film is 15 nm, FIG. 19B showsthat of the transistor in the case where the thickness of the gateinsulating film is 10 nm, and FIG. 19C shows that of the transistor inthe case where the thickness of the gate insulating film is 5 nm. As thethickness of the gate insulating film is smaller, the drain currentI_(d) (off-state current) particularly in an off state is significantlydecreased. In contrast, there is no noticeable change in the peak valueof the mobility μ and the drain current I_(d) in an on state (on-statecurrent).

FIGS. 20A to 20C show the gate voltage V_(g) dependence of the draincurrent I_(d) (solid line) and the mobility (dotted line) of thetransistor having the structure illustrated in FIG. 22B where the offsetlength L_(off) is 5 nm. The drain current I_(d) is obtained bycalculation under the assumption that the drain voltage is +1 V and themobility μ is obtained by calculation under the assumption that thedrain voltage is +0.1 V. FIG. 20A shows the gate voltage dependence ofthe transistor in the case where the thickness of the gate insulatingfilm is 15 nm, FIG. 20B shows that of the transistor in the case wherethe thickness of the gate insulating film is 10 nm, and FIG. 20C showsthat of the transistor in the case where the thickness of the gateinsulating film is 5 nm.

Further, FIGS. 21A to 21C show the gate voltage V_(g) dependence of thedrain current I_(d) (solid line) and the mobility (dotted line) of thetransistor having the structure illustrated in FIG. 22B where the offsetlength L_(off) is 15 nm. The drain current I_(d) is obtained bycalculation under the assumption that the drain voltage V_(d) is +1 Vand the mobility μ is obtained by calculation under the assumption thatthe drain voltage V_(d) is +0.1 V. FIG. 21A shows the gate voltagedependence of the transistor in the case where the thickness of the gateinsulating film is 15 nm, FIG. 21B shows that of the transistor in thecase where the thickness of the gate insulating film is 10 nm, and FIG.21C shows that of the transistor in the case where the thickness of thegate insulating film is 5 nm.

In either of the structures, as the gate insulating film is thinner, theoff-state current is significantly decreased, whereas no noticeablechange arises in the peak value of the mobility μ and the on-statecurrent.

Note that the peak of the mobility μ is approximately 80 cm²/Vs in FIGS.19A to 19C, approximately 60 cm²/Vs in FIGS. 20A to 20C, andapproximately 40 cm²/Vs in FIGS. 21A to 21C; thus, the peak of themobility μ is decreased as the offset length L_(off) is increased.Further, the same applies to the off-state current. The on-state currentis also decreased as the offset length L_(off) is increased; however,the decrease in the on-state current is much more gradual than thedecrease in the off-state current.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 9

In this embodiment, a transistor in which an oxide semiconductor filmcontaining In, Sn, and Zn as main components (an example of anIn—Sn—Zn-based oxide semiconductor film) is used for a channel formationregion will be described.

A transistor in which an oxide semiconductor film containing In, Sn, andZn as main components is used for a channel formation region can havefavorable characteristics by forming the oxide semiconductor film whileheating a substrate or by performing heat treatment after the oxidesemiconductor film is formed. Note that a main component refers to anelement contained in a composition at 5 atomic % or more. Thus, in thisembodiment, the case where the field-effect mobility of the transistoris improved by intentionally heating the substrate after formation ofthe oxide semiconductor film will be described with reference to FIGS.23A to 23C, FIGS. 24A and 24B, FIGS. 25A and 25B, FIG. 26, FIG. 27, FIG.28, and FIGS. 29A and 29B.

When the oxide semiconductor film containing In, Sn, and Zn as maincomponents is formed while the substrate is intentionally heated, thefield-effect mobility of the transistor can be improved. Further, thethreshold voltage of the transistor can be positively shifted to makethe transistor normally off.

As an example, FIGS. 23A to 23C are graphs each showing electriccharacteristics of a transistor in which an oxide semiconductor filmcontaining In, Sn, and Zn as main components and having a channel lengthL of 3 μm and a channel width W of 10 μm, and a gate insulating filmwith a thickness of 100 nm are used. Note that V_(d) was set to 10 V.

More specifically, FIGS. 23A to 23C each show the gate voltage V_(g)dependence of the drain current I_(d) (solid line) and the mobility μ(dotted line) of the transistor.

FIG. 23A is a graph showing electric characteristics of a transistorwhose oxide semiconductor film containing In, Sn, and Zn as maincomponents was formed by a sputtering method without heating a substrateintentionally. The field-effect mobility of the transistor is 18.8cm²/Vs. On the other hand, when the oxide semiconductor film containingIn, Sn, and Zn as main components is formed while heating the substrateintentionally, the field-effect mobility can be improved. FIG. 23B showselectric characteristics of a transistor whose oxide semiconductor filmcontaining In, Sn, and Zn as main components was formed while heating asubstrate at 200° C. The mobility of the transistor is 32.2 cm²/Vs.

The field-effect mobility can be further improved by performing heattreatment after formation of the oxide semiconductor film containing In,Sn, and Zn as main components. FIG. 23C shows electric characteristicsof a transistor whose oxide semiconductor film containing In, Sn, and Znas main components was formed by a sputtering method at 200° C. and thensubjected to heat treatment at 650° C. The field-effect mobility of thetransistor is 34.5 cm²/Vs.

The intentional heating of the substrate can reduce moisture taken intothe oxide semiconductor film during the formation by a sputteringmethod. Further, the heat treatment after film formation enableshydrogen, a hydroxyl group, or moisture to be released and removed fromthe oxide semiconductor film. In this manner, the field-effect mobilitycan be improved. Such an improvement in field-effect mobility ispresumed to be achieved not only by removal of impurities by dehydrationor dehydrogenation but also by a reduction in interatomic distance dueto an increase in density. The oxide semiconductor film can becrystallized by being highly purified by removal of impurities from theoxide semiconductor film. In the case of using such a highly purifiednon-single-crystal oxide semiconductor film, ideally, a field-effectmobility exceeding 100 cm²/Vs is expected to be realized.

The oxide semiconductor film containing In, Sn, and Zn as maincomponents may be crystallized in the following manner: oxygen ions areimplanted into the oxide semiconductor film, hydrogen, a hydroxyl group,or moisture contained in the oxide semiconductor film is released byheat treatment, and the oxide semiconductor film is crystallized throughthe heat treatment or by another heat treatment performed later. By suchcrystallization treatment or recrystallization treatment, anon-single-crystal oxide semiconductor film having favorablecrystallinity can be obtained.

The intentional heating of the substrate during film formation and/orthe heat treatment after the film formation contributes not only toimproving field-effect mobility but also to making the transistornormally off. In a transistor in which an oxide semiconductor film thatcontains In, Sn, and Zn as main components and is formed without heatinga substrate intentionally is used as a channel formation region, thethreshold voltage tends to be shifted negatively. However, when theoxide semiconductor film formed while heating the substrateintentionally is used, the problem of the negative shift of thethreshold voltage can be solved. That is, the threshold voltage isshifted so that the transistor becomes normally off; this tendency canbe confirmed by comparison between FIGS. 23A and 23B.

Note that the threshold voltage can also be controlled by changing theratio of In, Sn, and Zn; when the composition ratio of In, Sn, and Zn is2:1:3, a transistor can be normally off. In addition, an oxidesemiconductor film having high crystallinity can be obtained when thecomposition ratio of a target is set as follows: In:Sn:Zn=2:1:3.

Further, in the case where an In—Sn—Zn-based oxide is formed, an oxidetarget which has a composition ration of In:Sn:Zn=1:2:2, 2:1:3, 1:1:1,4:9:7, or the like in an atomic ratio is used.

The temperature of the intentional heating of the substrate or thetemperature of the heat treatment is 150° C. or higher, preferably 200°C. or higher, more preferably 400° C. or higher. When film formation orheat treatment is performed at a high temperature, the transistor can benormally off.

By intentionally heating the substrate during film formation and/or byperforming heat treatment after the film formation, the stabilityagainst a gate-bias stress can be increased. For example, when a gatebias is applied with an intensity of 2 MV/cm at 150° C. for one hour,drift of the threshold voltage can be less than ±1.5 V, preferably lessthan ±1.0 V.

A BT test was performed on the following two transistors: Sample 1 onwhich heat treatment was not performed after formation of an oxidesemiconductor film, and Sample 2 on which heat treatment at 650° C. wasperformed after formation of an oxide semiconductor film.

First, V_(g)-I_(d) characteristics of the transistors were measured at asubstrate temperature of 25° C. and V_(d) of 10 V. Then, the substratetemperature was set to 150° C. and V_(d) was set to 0.1 V. After that,20 V of V_(g) was applied so that the intensity of an electric fieldapplied to gate insulating films was 2 MV/cm, and the condition was keptfor one hour. Next, V_(g) was set to 0 V. Then, V_(g)-I_(d)characteristics of the transistors were measured at a substratetemperature of 25° C. and V_(d) of 10 V. This process is called apositive BT test.

In a similar manner, first, V_(g)-I_(d) characteristics of thetransistors were measured at a substrate temperature of 25° C. and V_(d)of 10 V. Then, the substrate temperature was set to 150° C. and V_(d)was set to 0.1 V. After that, −20 V of V_(g) was applied so that theintensity of an electric field applied to the gate insulating films was−2 MV/cm, and the condition was kept for one hour. Next, V_(g) was setto 0 V. Then, V_(g)-I_(d) characteristics of the transistors weremeasured at a substrate temperature of 25° C. and V_(d) of 10 V. Thisprocess is called a negative BT test.

FIGS. 24A and 24B show a result of the positive BT test of Sample 1 anda result of the negative BT test of Sample 1, respectively. FIGS. 25Aand 25B show a result of the positive BT test of Sample 2 and a resultof the negative BT test of Sample 2, respectively.

The amount of shift in the threshold voltage of Sample 1 due to thepositive BT test and that due to the negative BT test were 1.80 V and−0.42 V, respectively. The amount of shift in the threshold voltage ofSample 2 due to the positive BT test and that due to the negative BTtest were 0.79 V and 0.76 V, respectively.

It is found that, in each of Sample 1 and Sample 2, the amount of shiftin the threshold voltage between before and after the BT tests is smalland the reliability thereof is high.

The heat treatment can be performed in an oxygen atmosphere;alternatively, the heat treatment may be performed first in anatmosphere of nitrogen or an inert gas or under reduced pressure, andthen in an atmosphere containing oxygen. Oxygen is supplied to the oxidesemiconductor after dehydration or dehydrogenation, whereby an effect ofthe heat treatment can be further increased. As a method for supplyingoxygen after dehydration or dehydrogenation, a method in which oxygenions are accelerated by an electric field and implanted into the oxidesemiconductor film may be employed.

A defect due to oxygen vacancies is easily caused in the oxidesemiconductor or at the interface between the oxide semiconductor and afilm in contact with the oxide semiconductor; however, when excessoxygen is contained in the oxide semiconductor by the heat treatment,oxygen vacancies caused constantly can be filled with excess oxygen. Theexcess oxygen is oxygen existing mainly between lattices. When theconcentration of excess oxygen is set to higher than or equal to1×10¹⁶/cm³ and lower than or equal to 2×10²⁰/cm³, excess oxygen can becontained in the oxide semiconductor without causing crystal distortionor the like.

When heat treatment is performed so that at least part of the oxidesemiconductor includes crystal, a more stable oxide semiconductor filmcan be obtained. For example, when an oxide semiconductor film which isformed by a sputtering method using a target having a composition ratioof In:Sn:Zn=1:1:1 without heating a substrate intentionally is analyzedby X-ray diffraction (XRD), a halo pattern is observed. The formed oxidesemiconductor film can be crystallized by being subjected to heattreatment. The temperature of the heat treatment can be set asappropriate; when the heat treatment is performed at 650° C., forexample, a clear diffraction peak can be observed in an X-raydiffraction analysis.

An XRD analysis of an In—Sn—Zn-based oxide film was conducted. The XRDanalysis was conducted using an X-ray diffractometer D8 ADVANCEmanufactured by Bruker AXS, and measurement was performed by anout-of-plane method.

Sample A and Sample B were prepared and the XRD analysis was performedthereon. Methods for forming Sample A and Sample B will be describedbelow.

An In—Sn—Zn-based oxide film with a thickness of 100 nm was formed overa quartz substrate subjected to dehydrogenation treatment.

The In—Sn—Zn-based oxide film was formed with a sputtering apparatuswith a power of 100 W (DC) in an oxygen atmosphere. An In—Sn—Zn—O-basedtarget with an atomic ratio of In:Sn:Zn=1:1:1 was used as a target. Notethat the substrate heating temperature in film formation was set to 200°C. A sample formed in this manner was used as Sample A.

Next, a sample manufactured by a method similar to that of Sample A wassubjected to heat treatment at 650° C. As the heat treatment, heattreatment in a nitrogen atmosphere was first performed for one hour andheat treatment in an oxygen atmosphere was further performed for onehour without lowering the temperature. A sample formed in this mannerwas used as Sample B.

FIG. 26 shows XRD spectra of Sample A and Sample B. No peak derived fromcrystal was observed in Sample A, whereas peaks derived from crystalwere observed when 2θ was around 35 deg. and at 37 deg. to 38 deg. inSample B.

As described above, by intentionally heating a substrate duringdeposition of an oxide semiconductor containing In, Sn, and Zn as maincomponents and/or by performing heat treatment after the deposition,characteristics of a transistor can be improved.

These substrate heating and heat treatment have an effect of preventinghydrogen and a hydroxyl group, which are unfavorable impurities for anoxide semiconductor, from being included in the film or an effect ofremoving hydrogen and a hydroxyl group from the film. That is, an oxidesemiconductor can be highly purified by reducing hydrogen serving as adonor impurity from the oxide semiconductor, whereby a transistor can benormally off. The high purification of an oxide semiconductor enablesthe off-state current of the transistor to be 1 aA/μm or lower. Here,the unit of the off-state current is used to indicate current permicrometer in channel width.

FIG. 27 shows the relation between the off-state current of a transistorand the inverse of substrate temperature (absolute temperature) atmeasurement of the off-state current. In FIG. 27, the horizontal axisrepresents a value (1000/T) obtained by multiplying an inverse ofsubstrate temperature at measurement by 1000, for the sake ofsimplicity.

As shown in FIG. 27, the off-state current can be 1 aA/μm (1×10⁻¹⁸ A/μm)or lower, 100 zA/μm (1×10⁻¹⁹ A/μm) or lower, and 1 zA/μm (1×10⁻²¹ A/μm)or lower when the substrate temperature is 125° C., 85° C., and roomtemperature (27° C.), respectively. Preferably, the off-state currentcan be 0.1 aA/μm (1×10⁻¹⁹ A/μm) or lower, 10 zA/μm (1×10⁻²° A/μm) orlower, and 0.1 zA/μm (1×10⁻²² A/μm) or lower at 125° C., 85° C., androom temperature, respectively.

In order to prevent hydrogen and moisture from being contained in theoxide semiconductor film during formation thereof, it is naturallypreferable to increase the purity of a sputtering gas by sufficientlysuppressing leakage from the outside of a deposition chamber anddegasification through an inner wall of the deposition chamber. Forexample, a gas with a dew point of −70° C. or lower is preferably usedas the sputtering gas in order to prevent moisture from being containedin the film. In addition, it is preferable to use a target which ishighly purified so as not to contain impurities such as hydrogen andmoisture. Although it is possible to remove moisture from a film of anoxide semiconductor containing In, Sn, and Zn as main components by heattreatment, a film which does not contain moisture originally ispreferably formed because moisture is released from the oxidesemiconductor containing In, Sn, and Zn as main components at a highertemperature than from an oxide semiconductor containing In, Ga, and Znas main components.

The relation between the substrate temperature and electriccharacteristics of a transistor formed using Sample B, on which heattreatment at 650° C. was performed after formation of the oxidesemiconductor film, was evaluated.

The transistor used for the measurement has a channel length L of 3 μm,a channel width W of 10 μm, Lov of 0 μm, and dW of 0 μm. Note that V_(d)was set to 10 V. Note that the substrate temperature was −40° C., −25°C., 25° C., 75° C., 125° C., and 150° C. In the transistor, the width ofa portion where a gate electrode overlaps with one of a pair ofelectrodes is referred to as Lov, and the width of a portion of the pairof electrodes, which does not overlap with an oxide semiconductor film,is referred to as dW.

FIG. 28 shows the V_(g) dependence of I_(d) (solid line) andfield-effect mobility (dotted line). FIG. 29A shows the relation betweenthe substrate temperature and the threshold voltage, and FIG. 29B showsthe relation between the substrate temperature and the field-effectmobility.

From FIG. 29A, it is found that the threshold voltage gets lower as thesubstrate temperature increases. Note that the threshold voltage isdecreased from 1.09 V to −0.23 V in the range from −40° C. to 150° C.

From FIG. 29B, it is found that the field-effect mobility gets lower asthe substrate temperature increases. Note that the mobility is decreasedfrom 36 cm²/Vs to 32 cm²/Vs in the range from −40° C. to 150° C. Thus,it is found that variation in electric characteristics is small in theabove temperature range.

In a transistor in which such an oxide semiconductor containing In, Sn,and Zn as main components is used for a channel formation region, afield-effect mobility of 30 cm²/Vs or higher, preferably 40 cm²/Vs orhigher, more preferably 60 cm²/Vs or higher can be obtained with theoff-state current maintained at 1 aA/μm or lower, which makes itpossible to achieve on-state current needed for an LSI. For example, inan FET where L/W is 33 nm/40 nm, an on-state current of 12 μA or highercan flow when the gate voltage is 2.7 V and the drain voltage is 1.0 V.In addition, sufficient electric characteristics can be ensured in atemperature range needed for operation of a transistor. With suchcharacteristics, an integrated circuit having a novel function can berealized without decreasing the operation speed even when a transistorincluding an oxide semiconductor is also provided in an integratedcircuit formed using a Si semiconductor.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 10

In this embodiment, a transistor which includes an oxide semiconductorfilm and has a structure different from those in the above embodimentswill be described. As an oxide semiconductor included in the oxidesemiconductor film, either an oxide semiconductor containing In, Sn, andZn (In—Sn—Zn-based oxide semiconductor) or any of the other oxidesemiconductors described in the other embodiments may be used.

In this embodiment, an example of a transistor in which an In—Sn—Zn—Ofilm is used as an oxide semiconductor film will be described withreference to FIGS. 30A and 30B and the like.

FIGS. 30A and 30B are a top view and a cross-sectional view of acoplanar transistor having a top-gate top-contact structure. FIG. 30A isthe top view of the transistor. FIG. 30B is a cross section A1-A2 alongdashed-dotted line A1-A2 in FIG. 30A.

The transistor illustrated in FIG. 30B includes a substrate 1101; a baseinsulating layer 1102 provided over the substrate 1101; a protectiveinsulating film 1104 provided in the periphery of the base insulatinglayer 1102; an oxide semiconductor film 1106 provided over the baseinsulating layer 1102 and the protective insulating film 1104 andincluding a high-resistance region 1106 a and low-resistance regions1106 b; a gate insulating film 1108 provided over the oxidesemiconductor film 1106; a gate electrode 1110 provided to overlap withthe oxide semiconductor film 1106 with the gate insulating film 1108positioned therebetween; a sidewall insulating film 1112 provided incontact with a side surface of the gate electrode 1110; a pair ofelectrodes 1114 provided in contact with at least the low-resistanceregions 1106 b; an interlayer insulating film 1116 provided to cover atleast the oxide semiconductor film 1106, the gate electrode 1110, andthe pair of electrodes 1114; and a wiring 1118 provided to be connectedto at least one of the pair of electrodes 1114 through an opening formedin the interlayer insulating film 1116.

Although not illustrated, a protective film may be provided to cover theinterlayer insulating film 1116 and the wiring 1118. With the protectivefilm, a minute amount of leakage current generated due to surfaceconduction of the interlayer insulating film 1116 can be reduced andthus the off-state current of the transistor can be reduced.

This embodiment can be implemented in appropriate combination with anyof the other embodiments.

Embodiment 11

In this embodiment, an example of a transistor in which an In—Sn—Zn—Ofilm is used as an oxide semiconductor film and which is different fromthat in Embodiment 10 will be described. Note that although in thisembodiment, an oxide semiconductor containing In, Sn, and Zn(In—Sn—Zn-based oxide semiconductor) is used as an oxide semiconductorincluded in the oxide semiconductor film, any of the other oxidesemiconductors described in the other embodiments may be used.

FIGS. 31A and 31B are a top view and a cross-sectional view, whichillustrate a structure of a transistor manufactured in this embodiment.FIG. 31A is the top view of the transistor. FIG. 31B is across-sectional view along dashed-dotted line B1-B2 in FIG. 31A.

The transistor illustrated in FIG. 31B includes a substrate 600; a baseinsulating layer 602 provided over the substrate 600; an oxidesemiconductor film 606 provided over the base insulating layer 602; apair of electrodes 614 in contact with the oxide semiconductor film 606;a gate insulating film 608 provided over the oxide semiconductor film606 and the pair of electrodes 614; a gate electrode 610 provided tooverlap with the oxide semiconductor film 606 with the gate insulatingfilm 608 positioned therebetween; an interlayer insulating film 616provided to cover the gate insulating film 608 and the gate electrode610; wirings 618 connected to the pair of electrodes 614 throughopenings formed in the interlayer insulating film 616; and a protectivefilm 620 provided to cover the interlayer insulating film 616 and thewirings 618.

As the substrate 600, a glass substrate can be used. As the baseinsulating layer 602, a silicon oxide film can be used. As the oxidesemiconductor film 606, an In—Sn—Zn—O film can be used. As the pair ofelectrodes 614, a tungsten film can be used. As the gate insulating film608, a silicon oxide film can be used. The gate electrode 610 can have alayered structure of a tantalum nitride film and a tungsten film. Theinterlayer insulating film 616 can have a layered structure of a siliconoxynitride film and a polyimide film. The wirings 618 can each have alayered structure in which a titanium film, an aluminum film, and atitanium film are formed in this order. As the protective film 620, apolyimide film can be used.

Note that in the transistor having the structure illustrated in FIG.31A, the width of a portion where the gate electrode 610 overlaps withone of the pair of electrodes 614 is referred to as Lov. Similarly, thewidth of a portion of the pair of electrodes 614, which does not overlapwith the oxide semiconductor film 606, is referred to as dW.

This embodiment can be implemented in appropriate combination with anyof the above embodiments.

This application is based on Japanese Patent Application serial no.2011-075664 filed with the Japan Patent Office on Mar. 30, 2011 andJapanese Patent Application serial no. 2011-108888 filed with the JapanPatent Office on May 14, 2011, the entire contents of which are herebyincorporated by reference.

1. (canceled)
 2. A semiconductor device comprising: a first memorycircuit; a second memory circuit comprising a capacitor and a firsttransistor whose channel is formed in an oxide semiconductor layer, aselection circuit comprising a first input terminal, a second inputterminal, and an output terminal; a first switch; and a second switch,wherein at least one of the first memory circuit, the selection circuit,the first switch and the second switch comprises a second transistorwhose channel is formed in a single crystal semiconductor, wherein thefirst transistor is over the second transistor with an insulating layerinterposed therebetween, wherein the first input terminal of theselection circuit is electrically connected to the first switch and afirst terminal of the first transistor, wherein the second inputterminal of the selection circuit is electrically connected to one of apair of terminals of the capacitor and a second terminal of the firsttransistor, and wherein the output terminal of the selection circuit iselectrically connected to the second switch through the first memorycircuit.
 3. The semiconductor device according to claim 2, wherein thefirst switch is configured to be turned ON when the second switch isturned OFF, and wherein in the first switch is configured to be turnedOFF when the second switch is turned ON.
 4. The semiconductor deviceaccording to claim 2, wherein each of the first switch and the secondswitch is an analog switch.
 5. The semiconductor device according toclaim 2, wherein the selection circuit is configured to performswitching from input of a signal to the first input terminal or thesecond input terminal to output of the signal input to the first inputterminal or the second input terminal to the first memory circuit, inresponse to a selection signal input to the selection circuit.
 6. Thesemiconductor device according to claim 2, wherein the oxidesemiconductor layer contains indium and zinc.
 7. The semiconductordevice according to claim 2, wherein an off-state current of the firsttransistor is 1 aA/μm or lower.
 8. The semiconductor device according toclaim 2, wherein the single crystal semiconductor is a single crystalsilicon.
 9. A CPU comprising a register, wherein the register comprisesthe semiconductor device according to claim
 2. 10. A semiconductordevice comprising: a latch circuit comprising a first inverter and asecond inverter; a memory circuit comprising a capacitor and a firsttransistor whose channel is formed in an oxide semiconductor layer, aselection circuit comprising a first input terminal, a second inputterminal, and an output terminal; a first switch; and a second switch,wherein at least one of the first inverter, the second inverter, theselection circuit, the first switch and the second switch comprises asecond transistor whose channel is formed in a single crystalsemiconductor, wherein the first transistor is over the secondtransistor with an insulating layer interposed therebetween, wherein thefirst input terminal of the selection circuit is electrically connectedto the first switch and a first terminal of the first transistor,wherein the second input terminal of the selection circuit iselectrically connected to one of a pair of terminals of the capacitorand a second terminal of the first transistor, and wherein the outputterminal of the selection circuit is electrically connected to an inputterminal of the first inverter and an output terminal of the secondinverter, and wherein the second switch is electrically connected to anoutput terminal of the first inverter and an input terminal of thesecond inverter.
 11. The semiconductor device according to claim 10,wherein the first switch is configured to be turned ON when the secondswitch is turned OFF, and wherein in the first switch is configured tobe turned OFF when the second switch is turned ON.
 12. The semiconductordevice according to claim 10, wherein each of the first switch and thesecond switch is an analog switch.
 13. The semiconductor deviceaccording to claim 10, wherein the selection circuit is configured toperform switching from input of a signal to the first input terminal orthe second input terminal to output of the signal input to the firstinput terminal or the second input terminal to the latch circuit, inresponse to a selection signal input to the selection circuit.
 14. Thesemiconductor device according to claim 10, wherein the oxidesemiconductor layer contains indium and zinc.
 15. The semiconductordevice according to claim 10, wherein an off-state current of the firsttransistor is 1 aA/μm or lower.
 16. The semiconductor device accordingto claim 10, wherein the single crystal semiconductor is a singlecrystal silicon.
 17. A CPU comprising a register, wherein the registercomprises the semiconductor device according to claim 10.